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NTE194-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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NTE194-HXY

HXY MOSFET · Bipolar (BJT) · TO-92

NTE194-HXY from HXY MOSFET, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of 6 V minimum at IE=10µA.
2 BASE passive Base terminal of the NPN transistor; base-emitter saturation voltage VBE(sat) is 1 V at IC=10mA, IB=1mA and at IC=50mA, IB=5mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; limits are VCEO 160 V, VCBO 180 V and IC 0.6 A, with PC 625 mW.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V Ta=25°C 1
Collector-Emitter Voltage VCEO 160 V Ta=25°C 1
Emitter-Base Voltage VEBO 6 V Ta=25°C 1
Collector Current IC 0.6 A Ta=25°C 1
Collector Power Dissipation PC 625 mW Ta=25°C 1
Thermal Resistance From Junction To Ambient RJA 200 /W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 1
Collector-base breakdown voltage V(BR)CBO 180 V IC=100μA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 160 V IC=1mA,IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μA,IC=0 1
Collector cut-off current ICBO 50 nA VCB=120V,IE=0 1
Emitter cut-off current IEBO 50 nA VEB=4V,IC=0 1
DC current gain hFE(1) 80 VCE=5V, IC=1mA 1
DC current gain hFE(2) 100 200 VCE=5V, IC=10mA 1
DC current gain hFE(3) 50 VCE=5V, IC=50mA 1
Collector-emitter saturation voltage VCE(sat)(1) 0.15 V IC=10mA,IB=1mA 1
Collector-emitter saturation voltage VCE(sat)(2) 0.2 V IC=50mA,IB=5mA 1
Base-emitter saturation voltage VBE(sat)(1) 1 V IC=10mA,IB=1mA 1
Collector output capacitance Cob 6 pF VCB=10V,IE=0, f=1MHz 1
Emitter input capacitance Cib 20 pF VBE=0.5V,IC=0, f=1MHz 1
Transition frequency fT 100 300 MHz VCE=10V,IC=10mA, f=100MHz 1

CAD (KiCad official)

  • Symbol: NTE194-HXY
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: nte194-hxy-etched.step / nte194-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nte194-hxy.step / nte194-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 c6b3fa8c2a04b1d7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF