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NTD4860NT4G

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTD4860NT4G

UMW · MOSFETs · TO-252

NTD4860NT4G from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the gate-to-source voltage VGS is rated at ±20 V.
2 D passive DRAIN terminal; the drain-to-source voltage VDSS is rated at 25 V.
3 S passive SOURCE terminal; it is the reference for the gate-to-source rating VGS of ±20 V.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 25 V TJ=25°C 1
Gate-to-Source Voltage VGS -20 20 V TJ=25°C 1
Continuous Drain Current (RθJA) Note 1 ID 13 A TA=25°C 1
Continuous Drain Current (RθJA) Note 1 ID 10 A TA=85°C 1
Power Dissipation (RθJA) Note 1 PD 2 W TA=25°C 1
Continuous Drain Current (RθJA) Note 2 ID 10.4 A TA=25°C 1
Continuous Drain Current (RθJA) Note 2 ID 8 A TA=85°C 1
Power Dissipation (RθJA) Note 2 PD 1.28 W TA=25°C 1
Continuous Drain Current (RθJC) Note 1 ID 65 A TC=25°C 2
Continuous Drain Current (RθJC) Note 1 ID 50 A TC=85°C 2
Power Dissipation (RθJC) Note 1 PD 50 W TC=25°C 2
Pulsed Drain Current IDM 130 A tp=10μs 2
Current Limited by Package IDmaxPkg 45 A 2
Operating Junction and Storage Temperature TJ,TSTG -55 175 °C 2
Source Current (Body Diode) IS 42 A TA=25°C 2
Drain to Source dv/dt dv/dt 6 V/ns 2
Single Pulse Drain-to-Source Avalanche Energy EAS 84.5 mJ TJ=25°C, VDD=50V, VGS=10V, IL=13Apk, L=1mH, RG=25 Ω 2
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 2
Junction-to-Case (Drain) RθJC 3 °C/W 2
Junction-to-TAB (Drain) RθJC-TAB 3.5 °C/W 2
Junction-to-Ambient-Steady State Note 1 RθJA 75 °C/W Steady State, 1 sq-in pad, 1 oz Cu (Note 1) 2
Junction-to-Ambient-Steady State Note 2 RθJA 117 °C/W Steady State, minimum recommended pad (Note 2) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 25 V VGS=0V, ID=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, TJ=25°C 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS=20V, TJ=125°C 3
Gate-to-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) 2.5 V VDS=VGS, ID=250µA 3
Drain-to-Source On Resistance RDS(ON) 7.5 mΩ VGS=10V, ID=30A 3
Drain-to-Source On Resistance RDS(ON) 11.1 mΩ VGS=4.5V, ID=30A 3

CAD (KiCad official)

  • Symbol: NTD4860NT4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd4860nt4g-etched.step / ntd4860nt4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd4860nt4g.step / ntd4860nt4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 a385a5bd2931d5a1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF