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NTD4858N-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTD4858N-HXY

HXY MOSFET · MOSFETs · TO-252-2L

NTD4858N-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V absolute maximum and RDS(ON) specified at VGS=10V and 4.5V.
2 D passive Drain terminal, rated for 30 V VDS and 80 A continuous drain current at TC=25℃ (51 A at TC=100℃).
3 S passive Source terminal, the reference for VGS and the path for continuous source current IS rated up to 80 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current, Continuous (TC=25℃) ID 80 A TC=25℃ 1
Drain Current, Continuous (TC=100℃) ID 51 A TC=100℃ 1
Drain Current, Pulsed IDM 320 A 1
Single Pulse Avalanche Energy EAS 88 mJ 1
Single Pulse Avalanche Current IAS 42 A 1
Power Dissipation (TC=25℃) PD 54 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction to Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction to Case RθJC 2.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=24V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 5 6.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6.5 9 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS, ID=250uA 2
Single Pulse Avalanche Energy EAS 20 mJ VDD=25V, L=0.1mH, IAS=20A 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 320 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ 0.04 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient ΔVGS(th) -4 mV/℃ 2
Forward Transconductance gfs 18 S VDS=10V, ID=10A 2
Total Gate Charge Qg 11.1 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Source Charge Qgs 1.85 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Drain Charge Qgd 6.8 nC VDS=15V, VGS=4.5V, ID=20A 2
Turn-On Delay Time Td(on) 7.5 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Rise Time Tr 14.5 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Turn-Off Delay Time Td(off) 35.2 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Fall Time Tf 9.6 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=15A 2
Input Capacitance Ciss 1160 pF VDS=25V, VGS=0V, F=1MHz 2
Output Capacitance Coss 200 pF VGS=0V, VDS=0V, F=1MHz 2
Reverse Transfer Capacitance Crss 180 pF VGS=0V, VDS=0V, F=1MHz 2
Gate Resistance Rg 2.5 Ω 2

CAD (KiCad official)

  • Symbol: NTD4858N-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ntd4858n-hxy-etched.step / ntd4858n-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd4858n-hxy.step / ntd4858n-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 861445ad4ce57f8c, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF