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NTD4858N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTD4858N-HXY
HXY MOSFET · MOSFETs · TO-252-2L
NTD4858N-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V absolute maximum and RDS(ON) specified at VGS=10V and 4.5V. |
| 2 | D | passive | Drain terminal, rated for 30 V VDS and 80 A continuous drain current at TC=25℃ (51 A at TC=100℃). |
| 3 | S | passive | Source terminal, the reference for VGS and the path for continuous source current IS rated up to 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current, Continuous (TC=25℃) | ID | 80 | A | TC=25℃ | 1 | ||
| Drain Current, Continuous (TC=100℃) | ID | 51 | A | TC=100℃ | 1 | ||
| Drain Current, Pulsed | IDM | 320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 88 | mJ | 1 | |||
| Single Pulse Avalanche Current | IAS | 42 | A | 1 | |||
| Power Dissipation (TC=25℃) | PD | 54 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction to Case | RθJC | 2.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=24V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | 6.8 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | 9 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Single Pulse Avalanche Energy | EAS | 20 | mJ | VDD=25V, L=0.1mH, IAS=20A | 2 | ||
| Continuous Source Current | IS | 80 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 320 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.04 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th) | -4 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 18 | S | VDS=10V, ID=10A | 2 | ||
| Total Gate Charge | Qg | 11.1 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 1.85 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 6.8 | nC | VDS=15V, VGS=4.5V, ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 7.5 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | ||
| Rise Time | Tr | 14.5 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 35.2 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | ||
| Fall Time | Tf | 9.6 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=15A | 2 | ||
| Input Capacitance | Ciss | 1160 | pF | VDS=25V, VGS=0V, F=1MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 180 | pF | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Gate Resistance | Rg | 2.5 | Ω | 2 |
CAD (KiCad official)
- Symbol:
NTD4858N-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
ntd4858n-hxy-etched.step/ntd4858n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntd4858n-hxy.step/ntd4858n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
861445ad4ce57f8c, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).