NTA7002NT1G

{
  "slug": "nta7002nt1g",
  "version": "0.1.0",
  "type": "component",
  "description": "Leiditech MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "transistors-thyristors",
    "nta7002nt1g",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
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    "path": "docs/hero.png"
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    "README.md",
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    "nta7002nt1g.kicad_mod",
    "nta7002nt1g.glb",
    "nta7002nt1g.step",
    "nta7002nt1g.lbr",
    "docs/hero.png",
    "docs/nta7002nt1g-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "nta7002nt1g-hero.glb",
    "nta7002nt1g-hero.overlay.json",
    "nta7002nt1g-etched.glb"
  ],
  "component": {
    "mpn": "NTA7002NT1G",
    "manufacturer": "Leiditech",
    "package": "SOT-523",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603063466001514496",
    "parts": {
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      "footprint": "nta7002nt1g.kicad_mod",
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      "model_3d_step": "nta7002nt1g-etched.step",
      "model_3d_step_plain": "nta7002nt1g.step",
      "lbr": "nta7002nt1g.lbr"
    },
    "distributor_links": {
      "lcsc": "C5349369",
      "digikey": "NTA7002NT1GOSTR-ND",
      "mouser": "863-NTA7002NT1G"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T01:02:22Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "NTA7002NT1GOSTR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "863-NTA7002NT1G",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "GATE",
        "type": "input",
        "description": "Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage rated at ±20 V (VGS)."
      },
      {
        "number": "2",
        "name": "SOURCE",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, referenced by the 30 V drain-source breakdown rating [V(BR)DSS min 30 V at VGS = 0 V, ID = 10 µA]."
      },
      {
        "number": "3",
        "name": "DRAIN",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, rated for VDS of 30 V and a drain current of 150 mA per the device summary table, with power dissipation of 0.15 W."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet's pin list gives GATE/SOURCE/DRAIN but the pin-number-to-package-location drawing is n; The Continuous Drain Current (ID) row in the maximum ratings table has no value in the extracted tex; The RDS(on) values and the Min/Typ/Max columns in the electrical characteristics table are garbled i"
        ],
        "pages_sent": 3,
        "cost_usd": 0.0149,
        "at": "2026-10-21T00:57:41"
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        "pages": 3,
        "sha256": "5d7c1a13c6043443",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "checked": "2026-10-21",
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}