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NSVT30010MXV6T1G

Public Made by Adom

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onsemi Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray nsvt30010mxv6t1g: specified limits as data (metadata.characteristics, 43 rows from the datasheet) 53ce7cc 24d ago

NSVT30010MXV6T1G

onsemi · Bipolar (BJT) · SOT-563

NSVT30010MXV6T1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of PNP transistor Q2 (rated VEBO -5.0 V, IC -100 mAdc continuous per device).
2 B2 passive Base of PNP transistor Q2, matched to Q1 with VBE(1)-VBE(2) of 2.0 mV max and hFE ratio of 0.9 min.
3 C1 passive Collector of PNP transistor Q1 (VCEO -30 V, VCBO -30 V, IC -100 mAdc continuous).
4 E1 passive Emitter of PNP transistor Q1 (rated VEBO -5.0 V, IC -100 mAdc continuous per device).
5 B1 passive Base of PNP transistor Q1, matched to Q2 with VBE(1)-VBE(2) of 2.0 mV max and hFE ratio of 0.9 min.
6 C2 passive Collector of PNP transistor Q2 (VCEO -30 V, VCBO -30 V, IC -100 mAdc continuous).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -30 V 1
Collector-Base Voltage VCBO -30 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mAdc 1
Junction and Storage Temperature Range TJ, Tstg -55 150 C 2
Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC = −10 mA 2
Collector-Base Breakdown Voltage V(BR)CBO -30 V IC = −10 µA 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = −1.0 µA 2
Collector Cutoff Current ICBO -15 nA VCB = −30 V 2
Collector Cutoff Current ICBO -4 µA VCB = −30 V, TA = 150C 2
DC Current Gain hFE 270 520 IC = −10 µA, VCE = −5.0 V 2
DC Current Gain hFE 420 800 IC = −2.0 mA, VCE = −5.0 V 2
DC Current Gain Ratio hFE(1)/hFE(2) 0.9 1 IC = −2.0 mA, VCE = −5.0 V (Note 3) 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = −10 mA, IB = −0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.6 V IC = −100 mA, IB = −5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.75 V IC = −10 mA, IB = −1.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = −100 mA, IB = −10 mA 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = −2.0 mA, VCE = −5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = −10 mA, VCE = −5.0 V 2
Base-Emitter Voltage Matching VBE(1) − VBE(2) 2 mV IC = −2.0 mA, VCE = −5.0 V (Note 4) 2
Current-Gain - Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = −10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = −0.2 mA, VCE = −5 Vdc, RS = 2 k, f = 1 kHz, BW = 200Hz 2
Total Device Dissipation, one device heated PD 357 mW TA = 25C, Note 1 2
Derate above 25C, one device heated 2.9 mW/C Note 1 2
Total Device Dissipation, one device heated PD 429 mW TA = 25C, Note 2 2
Derate above 25C, one device heated 3.4 mW/C Note 2 2
Total Package Dissipation, two devices heated PD 500 mW TA = 25C, two devices heated (250 ea), Note 1 2
Derate above 25C, two devices heated 4 mW/C Note 1 2
Total Package Dissipation, two devices heated PD 661 mW TA = 25C, two devices heated (331 ea), Note 2 2
Derate above 25C, two devices heated 5.3 mW/C Note 2 2
Thermal Resistance Junction-to-Ambient, one heated device RθJA 350 C/W One heated device, Note 1 2
Thermal Resistance Junction-to-Ambient, one heated device RθJA 291 C/W One heated device, Note 2 2
Thermal Resistance Junction-to-Ambient, both devices heated RθJA 250 C/W Both devices heated, Note 1 2
Thermal Resistance Junction-to-Ambient, both devices heated RθJA 189 C/W Both devices heated, Note 2 2
Thermal Resistance Junction-to-Ambient, unheated device heated by heated device RθJA 149 C/W Unheated device heated by heated device, Note 1 2
Thermal Resistance Junction-to-Ambient, unheated device heated by heated device RθJA 88 C/W Unheated device heated by heated device, Note 2 2
Thermal Resistance Junction-to-Lead, lead attached to heated device RθJL 128 C/W Lead attached to heated device, one device heated, Note 1 2
Thermal Resistance Junction-to-Lead, lead attached to heated device RθJL 152 C/W Lead attached to heated device, one device heated, Note 2 2
Thermal Resistance Junction-to-Lead, lead attached to heated device RθJL 76 C/W Lead attached to heated device, both devices heated, Note 1 2
Thermal Resistance Junction-to-Lead, lead attached to heated device RθJL 85 C/W Lead attached to heated device, both devices heated, Note 2 2
Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device RθJL 224 C/W Heated device heating lead attached to unheated device, Note 1 2
Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device RθJL 222 C/W Heated device heating lead attached to unheated device, Note 2 2

CAD (KiCad official)

  • Symbol: NSVT30010MXV6T1G
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: nsvt30010mxv6t1g-etched.step / nsvt30010mxv6t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvt30010mxv6t1g.step / nsvt30010mxv6t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 b0622e0e882d7a18, retrieved 2026-10-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF