component
NSVT30010MXV6T1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
nsvt30010mxv6t1g: specified limits as data (metadata.characteristics, 43 rows from the datasheet)
2 files changed
+574−1
README.md+50@@ -24,6 +24,56 @@ NSVT30010MXV6T1G from onsemi, in a SOT-563. Pinout and pin descriptions extracte | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCEO | | | -30 | V | | 1 |+| Collector-Base Voltage | VCBO | | | -30 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | -5 | V | | 1 |+| Collector Current - Continuous | IC | | | -100 | mAdc | | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | C | | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 | | | V | IC = −10 mA | 2 |+| Collector-Base Breakdown Voltage | V(BR)CBO | -30 | | | V | IC = −10 µA | 2 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE = −1.0 µA | 2 |+| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = −30 V | 2 |+| Collector Cutoff Current | ICBO | | | -4 | µA | VCB = −30 V, TA = 150C | 2 |+| DC Current Gain | hFE | 270 | | 520 | | IC = −10 µA, VCE = −5.0 V | 2 |+| DC Current Gain | hFE | 420 | | 800 | | IC = −2.0 mA, VCE = −5.0 V | 2 |+| DC Current Gain Ratio | hFE(1)/hFE(2) | 0.9 | | 1 | | IC = −2.0 mA, VCE = −5.0 V (Note 3) | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | V | IC = −10 mA, IB = −0.5 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.6 | V | IC = −100 mA, IB = −5.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.75 | V | IC = −10 mA, IB = −1.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = −100 mA, IB = −10 mA | 2 |+| Base-Emitter On Voltage | VBE(on) | -0.6 | | -0.75 | V | IC = −2.0 mA, VCE = −5.0 V | 2 |+| Base-Emitter On Voltage | VBE(on) | | | -0.82 | V | IC = −10 mA, VCE = −5.0 V | 2 |+| Base-Emitter Voltage Matching | VBE(1) − VBE(2) | | | 2 | mV | IC = −2.0 mA, VCE = −5.0 V (Note 4) | 2 |+| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = −10 mA, VCE = −5 Vdc, f = 100 MHz | 2 |+| Output Capacitance | Cob | | | 4.5 | pF | VCB = −10 V, f = 1.0 MHz | 2 |+| Noise Figure | NF | | | 10 | dB | IC = −0.2 mA, VCE = −5 Vdc, RS = 2 k, f = 1 kHz, BW = 200Hz | 2 |+| Total Device Dissipation, one device heated | PD | | 357 | | mW | TA = 25C, Note 1 | 2 |+| Derate above 25C, one device heated | | | 2.9 | | mW/C | Note 1 | 2 |+| Total Device Dissipation, one device heated | PD | | 429 | | mW | TA = 25C, Note 2 | 2 |+| Derate above 25C, one device heated | | | 3.4 | | mW/C | Note 2 | 2 |+| Total Package Dissipation, two devices heated | PD | | 500 | | mW | TA = 25C, two devices heated (250 ea), Note 1 | 2 |+| Derate above 25C, two devices heated | | | 4 | | mW/C | Note 1 | 2 |+| Total Package Dissipation, two devices heated | PD | | 661 | | mW | TA = 25C, two devices heated (331 ea), Note 2 | 2 |+| Derate above 25C, two devices heated | | | 5.3 | | mW/C | Note 2 | 2 |+| Thermal Resistance Junction-to-Ambient, one heated device | RθJA | | 350 | | C/W | One heated device, Note 1 | 2 |+| Thermal Resistance Junction-to-Ambient, one heated device | RθJA | | 291 | | C/W | One heated device, Note 2 | 2 |+| Thermal Resistance Junction-to-Ambient, both devices heated | RθJA | | 250 | | C/W | Both devices heated, Note 1 | 2 |+| Thermal Resistance Junction-to-Ambient, both devices heated | RθJA | | 189 | | C/W | Both devices heated, Note 2 | 2 |+| Thermal Resistance Junction-to-Ambient, unheated device heated by heated device | RθJA | | 149 | | C/W | Unheated device heated by heated device, Note 1 | 2 |+| Thermal Resistance Junction-to-Ambient, unheated device heated by heated device | RθJA | | 88 | | C/W | Unheated device heated by heated device, Note 2 | 2 |+| Thermal Resistance Junction-to-Lead, lead attached to heated device | RθJL | | 128 | | C/W | Lead attached to heated device, one device heated, Note 1 | 2 |+| Thermal Resistance Junction-to-Lead, lead attached to heated device | RθJL | | 152 | | C/W | Lead attached to heated device, one device heated, Note 2 | 2 |+| Thermal Resistance Junction-to-Lead, lead attached to heated device | RθJL | | 76 | | C/W | Lead attached to heated device, both devices heated, Note 1 | 2 |+| Thermal Resistance Junction-to-Lead, lead attached to heated device | RθJL | | 85 | | C/W | Lead attached to heated device, both devices heated, Note 2 | 2 |+| Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device | RθJL | | 224 | | C/W | Heated device heating lead attached to unheated device, Note 1 | 2 |+| Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device | RθJL | | 222 | | C/W | Heated device heating lead attached to unheated device, Note 2 | 2 |+ ## CAD (KiCad official) - Symbol: `NSVT30010MXV6T1G`
page.json+524−1@@ -169,6 +169,529 @@ "Package": "SOT-563", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b0622e0e882d7a18",+ "rows": [+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "IE = −1.0 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -15,+ "conditions": "VCB = −30 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -4,+ "conditions": "VCB = −30 V, TA = 150C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 270,+ "typ": null,+ "max": 520,+ "conditions": "IC = −10 µA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 420,+ "typ": null,+ "max": 800,+ "conditions": "IC = −2.0 mA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain Ratio",+ "symbol": "hFE(1)/hFE(2)",+ "kind": "electrical",+ "unit": "",+ "min": 0.9,+ "typ": null,+ "max": 1,+ "conditions": "IC = −2.0 mA, VCE = −5.0 V (Note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.3,+ "conditions": "IC = −10 mA, IB = −0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.6,+ "conditions": "IC = −100 mA, IB = −5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.75,+ "conditions": "IC = −10 mA, IB = −1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.9,+ "conditions": "IC = −100 mA, IB = −10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.6,+ "typ": null,+ "max": -0.75,+ "conditions": "IC = −2.0 mA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.82,+ "conditions": "IC = −10 mA, VCE = −5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Voltage Matching",+ "symbol": "VBE(1) − VBE(2)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "IC = −2.0 mA, VCE = −5.0 V (Note 4)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA, VCE = −5 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = −10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "IC = −0.2 mA, VCE = −5 Vdc, RS = 2 k, f = 1 kHz, BW = 200Hz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, one device heated",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": 357,+ "max": null,+ "conditions": "TA = 25C, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25C, one device heated",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/C",+ "min": null,+ "typ": 2.9,+ "max": null,+ "conditions": "Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, one device heated",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": 429,+ "max": null,+ "conditions": "TA = 25C, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25C, one device heated",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/C",+ "min": null,+ "typ": 3.4,+ "max": null,+ "conditions": "Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Package Dissipation, two devices heated",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": 500,+ "max": null,+ "conditions": "TA = 25C, two devices heated (250 ea), Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25C, two devices heated",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/C",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Package Dissipation, two devices heated",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": 661,+ "max": null,+ "conditions": "TA = 25C, two devices heated (331 ea), Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25C, two devices heated",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/C",+ "min": null,+ "typ": 5.3,+ "max": null,+ "conditions": "Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, one heated device",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 350,+ "max": null,+ "conditions": "One heated device, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, one heated device",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 291,+ "max": null,+ "conditions": "One heated device, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, both devices heated",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 250,+ "max": null,+ "conditions": "Both devices heated, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, both devices heated",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 189,+ "max": null,+ "conditions": "Both devices heated, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, unheated device heated by heated device",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 149,+ "max": null,+ "conditions": "Unheated device heated by heated device, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient, unheated device heated by heated device",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 88,+ "max": null,+ "conditions": "Unheated device heated by heated device, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, lead attached to heated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 128,+ "max": null,+ "conditions": "Lead attached to heated device, one device heated, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, lead attached to heated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 152,+ "max": null,+ "conditions": "Lead attached to heated device, one device heated, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, lead attached to heated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 76,+ "max": null,+ "conditions": "Lead attached to heated device, both devices heated, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, lead attached to heated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 85,+ "max": null,+ "conditions": "Lead attached to heated device, both devices heated, Note 2",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 224,+ "max": null,+ "conditions": "Heated device heating lead attached to unheated device, Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Lead, heated device heating lead attached to unheated device",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "C/W",+ "min": null,+ "typ": 222,+ "max": null,+ "conditions": "Heated device heating lead attached to unheated device, Note 2",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -211,4 +734,4 @@ "visibility": { "public": true }-}+}