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NSVMMUN2112LT1G

Public Made by Adom

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onsemi Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVMMUN2112LT1G

onsemi · Digital Transistors · SOT-23

NSVMMUN2112LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base is the input pin of the bias resistor transistor, with the datasheet stating a maximum input forward voltage VIN(fwd) of 40 Vdc and a maximum input reverse voltage VIN(rev) of 10 Vdc.
2 EMITTER power_in Emitter is the ground reference pin of the transistor (labeled GROUND in the datasheet), and the datasheet gives no separate electrical limit for it.
3 COLLECTOR output Collector is the output pin, with the datasheet stating a maximum collector-base voltage VCBO of 50 Vdc, a maximum collector-emitter voltage VCEO of 50 Vdc, and a continuous collector current IC of 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector−Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter−Base Cutoff Current IEBO 0.2 mAdc VEB = 6.0 V, IC = 0 4
Collector−Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 4
Collector−Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 (Note 5: pulsed) 4
DC Current Gain hFE 60 100 IC = 5.0 mA, VCE = 10 V (Note 5: pulsed) 4
Collector−Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 0.3 mA (Note 5: pulsed) 4
Input Voltage (off) Vi(off) 1.2 0.8 Vdc VCE = 5.0 V, IC = 100 A 4
Input Voltage (on) Vi(on) 2.5 1.7 Vdc VCE = 0.3 V, IC = 5.0 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4
Input Resistor R1 R1 15.4 22 28.6 k 4
Resistor Ratio R1/R2 R1/R2 0.8 1 1.2 4
Collector−Base Voltage VCBO 50 Vdc TA = 25°C 1
Collector−Emitter Voltage VCEO 50 Vdc TA = 25°C 1
Collector Current − Continuous IC 100 mAdc TA = 25°C 1
Input Forward Voltage VIN(fwd) 40 Vdc TA = 25°C 1
Input Reverse Voltage VIN(rev) 10 Vdc TA = 25°C 1
Total Device Dissipation PD 246 mW TA = 25°C (Note 1: FR-4 @ Minimum Pad) 3
Total Device Dissipation PD 400 mW TA = 25°C (Note 2: FR-4 @ 1.0 x 1.0 Inch Pad) 3
Derate above 25°C 2 mW/°C Note 1: FR-4 @ Minimum Pad 3
Derate above 25°C 3.2 mW/°C Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Ambient RJA 508 °C/W Note 1: FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Ambient RJA 311 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Lead RJL 174 °C/W Note 1: FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Lead RJL 208 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 3
Input Resistor R2 (nominal, title) R2 22 k 1

CAD (KiCad official)

  • Symbol: NSVMMUN2112LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmun2112lt1g-etched.step / nsvmmun2112lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmun2112lt1g.step / nsvmmun2112lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 90e0311802ee1b16, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF