# NSVMMBT5401WT1G-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-323

NSVMMBT5401WT1G-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet drawing labels this lead B, with VEBO limited to -5 V. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet drawing labels this lead E, with VEBO limited to -5 V. |
| 3 | C | passive | Collector of the PNP transistor, the single lead on one side of the package; VCBO is -160 V, VCEO is -150 V and continuous IC is -600 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 |  |  | V | IC=-100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -150 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-10µA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -50 | nA | VCB=-120V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -50 | nA | VEB=-3V, IC=0 | 1 |
| DC current gain | hFE | 50 |  |  |  | VCE=-5V, IC=-1mA | 1 |
| DC current gain | hFE | 100 |  | 300 |  | VCE=-5V, IC=-10mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.5 | V | IC=-50mA, IB=-5mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.2 | V | IC=-10mA, IB=-1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1 | V | IC=-50mA, IB=-5mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-10V,IC=-10mA, f=100MHz | 1 |
| Collector output capacitance | Cob |  |  | 6 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
| Collector-Base Voltage | VCBO |  |  | -160 | V | Ta=25°C | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -150 | V | Ta=25°C | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V | Ta=25°C | 1 |
| Collector Current-Continuous | IC |  |  | -600 | mA | Ta=25°C | 1 |
| Collector Power Dissipation | PC |  |  | 200 | mW | Ta=25°C | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  | 625 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `NSVMMBT5401WT1G-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `nsvmmbt5401wt1g-hxy-etched.step` / `nsvmmbt5401wt1g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nsvmmbt5401wt1g-hxy.step` / `nsvmmbt5401wt1g-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/nsvmmbt5401wt1g-hxy-datasheet.pdf) (4 pp, sha256 `2d31f78d6c643576`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nsvmmbt5401wt1g-hxy-datasheet.pdf)