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NSVMMBT5401WT1G-HXY

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HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVMMBT5401WT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-323

NSVMMBT5401WT1G-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet drawing labels this lead B, with VEBO limited to -5 V.
2 E passive Emitter of the PNP transistor; the datasheet drawing labels this lead E, with VEBO limited to -5 V.
3 C passive Collector of the PNP transistor, the single lead on one side of the package; VCBO is -160 V, VCEO is -150 V and continuous IC is -600 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -150 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC=0 1
Collector cut-off current ICBO -50 nA VCB=-120V, IE=0 1
Emitter cut-off current IEBO -50 nA VEB=-3V, IC=0 1
DC current gain hFE 50 VCE=-5V, IC=-1mA 1
DC current gain hFE 100 300 VCE=-5V, IC=-10mA 1
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA, IB=-5mA 1
Collector-emitter saturation voltage VCE(sat) -0.2 V IC=-10mA, IB=-1mA 1
Base-emitter saturation voltage VBE(sat) -1 V IC=-50mA, IB=-5mA 1
Transition frequency fT 100 MHz VCE=-10V,IC=-10mA, f=100MHz 1
Collector output capacitance Cob 6 pF VCB=-10V, IE=0, f=1MHz 1
Collector-Base Voltage VCBO -160 V Ta=25°C 1
Collector-Emitter Voltage VCEO -150 V Ta=25°C 1
Emitter-Base Voltage VEBO -5 V Ta=25°C 1
Collector Current-Continuous IC -600 mA Ta=25°C 1
Collector Power Dissipation PC 200 mW Ta=25°C 1
Storage Temperature Tstg -55 150 °C 1
Thermal Resistance From Junction To Ambient RΘJA 625 °C/W 1

CAD (KiCad official)

  • Symbol: NSVMMBT5401WT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt5401wt1g-hxy-etched.step / nsvmmbt5401wt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt5401wt1g-hxy.step / nsvmmbt5401wt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 2d31f78d6c643576, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF