# NSS12100XV6T1G

**onsemi** · Bipolar (BJT) · SOT-563

NSS12100XV6T1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates VCEO at −12 Vdc, continuous IC at −1.0 A and peak ICM at −2.0 A. |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 5 and 6 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |
| 3 | BASE | input | Base terminal of the PNP transistor; the datasheet rates emitter-base voltage VEBO at −5.0 Vdc maximum. |
| 4 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet gives emitter-base breakdown V(BR)EBO of −5.0 Vdc minimum. |
| 5 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 2 and 6 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |
| 6 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 2 and 5 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -12 |  |  | Vdc | IC = −10 mAdc, IB = 0 | 2 |
| Collector−Base Breakdown Voltage | V(BR)CBO | -12 |  |  | Vdc | IC = −0.1 mAdc, IE = 0 | 2 |
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 |  |  | Vdc | IE = −0.1 mAdc, IC = 0 | 2 |
| Collector Cutoff Current | ICBO |  | -0.02 | -0.1 | Adc | VCB = −12 Vdc, IE = 0 | 2 |
| Emitter Cutoff Current | IEBO |  | -0.03 | -0.1 | Adc | VCES = −5.0 Vdc, IE = 0 | 2 |
| DC Current Gain | hFE | 200 |  |  |  | IC = −10 mA, VCE = −2.0 V | 2 |
| DC Current Gain | hFE | 100 |  |  |  | IC = −500 mA, VCE = −2.0 V | 2 |
| DC Current Gain | hFE | 90 |  |  |  | IC = −1.0 A, VCE = −2.0 V | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) |  | -0.03 | -0.04 | V | IC = −0.05 A, IB = −0.005 A (Note 4) | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) |  | -0.08 | -0.1 | V | IC = −0.1 A, IB = −0.002 A | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) |  | -0.05 | -0.06 | V | IC = −0.1 A, IB = −0.010 A | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) |  | -0.2 | -0.225 | V | IC = −0.5 A, IB = −0.050 A | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) |  | -0.4 | -0.44 | V | IC = −1.0 A, IB = −0.100 A | 2 |
| Base−Emitter Saturation Voltage | VBE(sat) |  | 0.95 | -1.15 | V | IC = −1.0 A, IB = −0.01 A | 2 |
| Base−Emitter Turn−on Voltage | VBE(on) |  | -1.05 | -1.15 | V | IC = −2.0 A, VCE = −3.0 V | 2 |
| Collector−Emitter Voltage | VCEO |  |  | -12 | Vdc |  | 1 |
| Collector−Base Voltage | VCBO |  |  | -12 | Vdc |  | 1 |
| Emitter−Base Voltage | VEBO |  |  | -5 | Vdc |  | 1 |
| Collector Current − Continuous | IC |  |  | -1 | Adc |  | 1 |
| Collector Current − Peak | ICM |  |  | -2 | Adc |  | 1 |
| Total Device Dissipation, TA = 25°C (Note 1) | PD |  |  | 500 | mW | TA = 25°C, FR−4 @ 100 mm2, 1 oz copper traces | 2 |
| Derate above 25°C (Note 1) |  |  |  | 4 | mW/°C | FR−4 @ 100 mm2, 1 oz copper traces | 2 |
| Thermal Resistance, Junction−to−Ambient (Note 1) | RJA |  |  | 250 | °C/W | FR−4 @ 100 mm2, 1 oz copper traces | 2 |
| Total Device Dissipation, TA = 25°C (Note 2) | PD |  |  | 650 | mW | TA = 25°C, FR−4 @ 500 mm2, 1 oz copper traces | 2 |
| Derate above 25°C (Note 2) |  |  |  | 5.2 | mW/°C | FR−4 @ 500 mm2, 1 oz copper traces | 2 |
| Thermal Resistance, Junction−to−Ambient (Note 2) | RJA |  |  | 192 | °C/W | FR−4 @ 500 mm2, 1 oz copper traces | 2 |
| Thermal Resistance, Junction−to−Lead 6 | RJL |  |  | 105 | °C/W |  | 2 |
| Total Device Dissipation (Single Pulse < 10 sec.) | PD Single |  |  | 1 | W | Single Pulse < 10 sec. | 2 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 2 |

## CAD (KiCad official)

- Symbol: `NSS12100XV6T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `nss12100xv6t1g-etched.step` / `nss12100xv6t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nss12100xv6t1g.step` / `nss12100xv6t1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588910954986024960) (7 pp, sha256 `05231bca0af0caf8`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nss12100xv6t1g-datasheet.pdf)