component
NSS12100XV6T1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNSS12100XV6T1G
onsemi · Bipolar (BJT) · SOT-563
NSS12100XV6T1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates VCEO at −12 Vdc, continuous IC at −1.0 A and peak ICM at −2.0 A. |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 5 and 6 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |
| 3 | BASE | input | Base terminal of the PNP transistor; the datasheet rates emitter-base voltage VEBO at −5.0 Vdc maximum. |
| 4 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet gives emitter-base breakdown V(BR)EBO of −5.0 Vdc minimum. |
| 5 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 2 and 6 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |
| 6 | COLLECTOR | passive | Collector terminal of the PNP transistor, bonded with pins 1, 2 and 5 as listed in the pinout; the datasheet rates VCEO at −12 Vdc and continuous IC at −1.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -12 | Vdc | IC = −10 mAdc, IB = 0 | 2 | ||
| Collector−Base Breakdown Voltage | V(BR)CBO | -12 | Vdc | IC = −0.1 mAdc, IE = 0 | 2 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = −0.1 mAdc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -0.02 | -0.1 | Adc | VCB = −12 Vdc, IE = 0 | 2 | |
| Emitter Cutoff Current | IEBO | -0.03 | -0.1 | Adc | VCES = −5.0 Vdc, IE = 0 | 2 | |
| DC Current Gain | hFE | 200 | IC = −10 mA, VCE = −2.0 V | 2 | |||
| DC Current Gain | hFE | 100 | IC = −500 mA, VCE = −2.0 V | 2 | |||
| DC Current Gain | hFE | 90 | IC = −1.0 A, VCE = −2.0 V | 2 | |||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.03 | -0.04 | V | IC = −0.05 A, IB = −0.005 A (Note 4) | 2 | |
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.08 | -0.1 | V | IC = −0.1 A, IB = −0.002 A | 2 | |
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.05 | -0.06 | V | IC = −0.1 A, IB = −0.010 A | 2 | |
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.2 | -0.225 | V | IC = −0.5 A, IB = −0.050 A | 2 | |
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.4 | -0.44 | V | IC = −1.0 A, IB = −0.100 A | 2 | |
| Base−Emitter Saturation Voltage | VBE(sat) | 0.95 | -1.15 | V | IC = −1.0 A, IB = −0.01 A | 2 | |
| Base−Emitter Turn−on Voltage | VBE(on) | -1.05 | -1.15 | V | IC = −2.0 A, VCE = −3.0 V | 2 | |
| Collector−Emitter Voltage | VCEO | -12 | Vdc | 1 | |||
| Collector−Base Voltage | VCBO | -12 | Vdc | 1 | |||
| Emitter−Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current − Continuous | IC | -1 | Adc | 1 | |||
| Collector Current − Peak | ICM | -2 | Adc | 1 | |||
| Total Device Dissipation, TA = 25°C (Note 1) | PD | 500 | mW | TA = 25°C, FR−4 @ 100 mm2, 1 oz copper traces | 2 | ||
| Derate above 25°C (Note 1) | 4 | mW/°C | FR−4 @ 100 mm2, 1 oz copper traces | 2 | |||
| Thermal Resistance, Junction−to−Ambient (Note 1) | RJA | 250 | °C/W | FR−4 @ 100 mm2, 1 oz copper traces | 2 | ||
| Total Device Dissipation, TA = 25°C (Note 2) | PD | 650 | mW | TA = 25°C, FR−4 @ 500 mm2, 1 oz copper traces | 2 | ||
| Derate above 25°C (Note 2) | 5.2 | mW/°C | FR−4 @ 500 mm2, 1 oz copper traces | 2 | |||
| Thermal Resistance, Junction−to−Ambient (Note 2) | RJA | 192 | °C/W | FR−4 @ 500 mm2, 1 oz copper traces | 2 | ||
| Thermal Resistance, Junction−to−Lead 6 | RJL | 105 | °C/W | 2 | |||
| Total Device Dissipation (Single Pulse < 10 sec.) | PD Single | 1 | W | Single Pulse < 10 sec. | 2 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
NSS12100XV6T1G - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
nss12100xv6t1g-etched.step/nss12100xv6t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nss12100xv6t1g.step/nss12100xv6t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
05231bca0af0caf8, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).