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NSS12100M3T5G

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onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistornss12100m3t5gfactory-2.0.0extractor-text

Verified NSS12100M3T5G

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NSS12100M3T5G · SOT-723 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 5-page datasheet
  • ✓distributor: lcsc C463395, digikey NSS12100M3T5GOSTR-ND, mouser 863-NSS12100M3T5G
  • ✓family: SOT-723
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-nbwve8ed/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nss12100m3t5g.kicad_sym✓ nss12100m3t5g.kicad_mod✓ nss12100m3t5g.step
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Ray Publish 0.1.0 6164549 4d ago

NSS12100M3T5G

onsemi · Bipolar Transistors - BJT · SOT-723

NSS12100M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet specifies base drive at IB = -0.01 A for VBE(sat) of 0.95 V typical at IC = -1.0 A.
2 EMITTER passive Emitter terminal of the PNP transistor; the maximum emitter-base voltage VEBO is -5.0 Vdc and the emitter-base breakdown voltage V(BR)EBO is -5.0 Vdc minimum.
3 COLLECTOR passive Collector terminal of the PNP transistor; continuous collector current IC is rated -1.0 Adc with peak ICM of -3.0 Adc and VCEO of -12 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -12 Vdc IC = -10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -12 Vdc IC = -0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 Vdc IE = -0.1 mAdc, IC = 0 2
Collector Cutoff Current ICBO -0.01 -0.1 Adc VCB = -12 Vdc, IE = 0 2
Emitter Cutoff Current IEBO -0.01 -0.1 Adc VCES = -5.0 Vdc, IE = 0 2
DC Current Gain hFE 200 - IC = -10 mA, VCE = -2.0 V 2
DC Current Gain hFE 120 - IC = -500 mA, VCE = -2.0 V 2
DC Current Gain hFE 80 - IC = -1.0 A, VCE = -2.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.03 -0.035 V IC = -0.05 A, IB = -0.005 A (Note 4) 2
Collector-Emitter Saturation Voltage VCE(sat) -0.06 -0.08 V IC = -0.1 A, IB = -0.002 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.04 -0.06 V IC = -0.1 A, IB = -0.010 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.155 -0.22 V IC = -0.5 A, IB = -0.050 A 2
Collector-Emitter Saturation Voltage VCE(sat) -0.35 -0.41 V IC = -1.0 A, IB = -0.100 A 2
Base-Emitter Saturation Voltage VBE(sat) 0.95 -1.15 V IC = -1.0 A, IB = -0.01 A 2
Base-Emitter Turn-on Voltage VBE(on) -1.05 -1.15 V IC = -2.0 A, VCE = -2.0 V 2
Input Capacitance Cibo 40 50 pF VEB = -0.5 V, f = 1.0 MHz 2
Output Capacitance Cobo 15 20 pF VCB = -3.0 V, f = 1.0 MHz 2
Noise Figure NF 5 dB IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 MHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO -12 Vdc 1
Collector-Base Voltage VCBO -12 Vdc 1
Emitter-Base Voltage VEBO -5 Vdc 1
Collector Current - Continuous IC -1 Adc 1
Collector Current - Peak ICM -3 Adc 1
Total Device Dissipation PD 460 mW TA = 25°C (Note 1) 2
Total Device Dissipation PD 625 mW TA = 25°C (Note 2) 2
Thermal Resistance, Junction-to-Ambient RJA 270 °C/W (Note 1) 2
Thermal Resistance, Junction-to-Ambient RJA 200 °C/W (Note 2) 2
Thermal Resistance, Junction-to-Lead 3 RJL 105 °C/W 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: NSS12100M3T5G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723 (KiCad packages3D, STEP)
  • 3D model files: nss12100m3t5g-etched.step / nss12100m3t5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nss12100m3t5g.step / nss12100m3t5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 13386795117dd190, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF