component
NSS12100M3T5G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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NSS12100M3T5G
onsemi · Bipolar Transistors - BJT · SOT-723
NSS12100M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies base drive at IB = -0.01 A for VBE(sat) of 0.95 V typical at IC = -1.0 A. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the maximum emitter-base voltage VEBO is -5.0 Vdc and the emitter-base breakdown voltage V(BR)EBO is -5.0 Vdc minimum. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; continuous collector current IC is rated -1.0 Adc with peak ICM of -3.0 Adc and VCEO of -12 Vdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -12 | Vdc | IC = -10 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -12 | Vdc | IC = -0.1 mAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -0.1 mAdc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -0.01 | -0.1 | Adc | VCB = -12 Vdc, IE = 0 | 2 | |
| Emitter Cutoff Current | IEBO | -0.01 | -0.1 | Adc | VCES = -5.0 Vdc, IE = 0 | 2 | |
| DC Current Gain | hFE | 200 | - | IC = -10 mA, VCE = -2.0 V | 2 | ||
| DC Current Gain | hFE | 120 | - | IC = -500 mA, VCE = -2.0 V | 2 | ||
| DC Current Gain | hFE | 80 | - | IC = -1.0 A, VCE = -2.0 V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.03 | -0.035 | V | IC = -0.05 A, IB = -0.005 A (Note 4) | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.06 | -0.08 | V | IC = -0.1 A, IB = -0.002 A | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.04 | -0.06 | V | IC = -0.1 A, IB = -0.010 A | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.155 | -0.22 | V | IC = -0.5 A, IB = -0.050 A | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.35 | -0.41 | V | IC = -1.0 A, IB = -0.100 A | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.95 | -1.15 | V | IC = -1.0 A, IB = -0.01 A | 2 | |
| Base-Emitter Turn-on Voltage | VBE(on) | -1.05 | -1.15 | V | IC = -2.0 A, VCE = -2.0 V | 2 | |
| Input Capacitance | Cibo | 40 | 50 | pF | VEB = -0.5 V, f = 1.0 MHz | 2 | |
| Output Capacitance | Cobo | 15 | 20 | pF | VCB = -3.0 V, f = 1.0 MHz | 2 | |
| Noise Figure | NF | 5 | dB | IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 MHz, BW = 200 Hz | 2 | ||
| Collector-Emitter Voltage | VCEO | -12 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -12 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | -1 | Adc | 1 | |||
| Collector Current - Peak | ICM | -3 | Adc | 1 | |||
| Total Device Dissipation | PD | 460 | mW | TA = 25°C (Note 1) | 2 | ||
| Total Device Dissipation | PD | 625 | mW | TA = 25°C (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 270 | °C/W | (Note 1) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 200 | °C/W | (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Lead 3 | RJL | 105 | °C/W | 2 | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
NSS12100M3T5G - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files:
nss12100m3t5g-etched.step/nss12100m3t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nss12100m3t5g.step/nss12100m3t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
13386795117dd190, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).