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NSI45030AZT1G

onsemi · LED Drivers · SOT-223-4

NSI45030AZT1G from onsemi, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Anode	passive	Anode of the constant current regulator; Vak max 45 V, regulates 30 mA ±10% at Vak = 7.5 V, can be used as high-side or low-side regulator.
2	Cathode	passive	Cathode of the constant current regulator (Style 2 pin 2), internally common with pin 4; Vak max 45 V and reverse voltage VR max 500 mV.
3	NC	unconnected	No connect pin per Style 2 pinout.
4	Cathode	passive	Cathode tab (Style 2 pin 4, shown as Cathode 2/4) used as the thermal lead with RψJL4 of 37.7 to 42 °C/W depending on board copper.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-223-4
Category	Display Modules / LED Drivers / Display Drivers
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Steady State Current	Ireg(SS)	27	30	33	mA	Vak = 7.5 V, TA = 25°C	2
Pulse Current	Ireg(P)	28.4	31.55	34.7	mA	Vak = 7.5 V, pulse test	2
Anode-Cathode Voltage	Vak			45	V	TA = 25°C	1
Reverse Voltage	VR			500	mV	TA = 25°C	1
Operating and Storage Junction Temperature Range	TJ, Tstg	-55		150	°C	TA = 25°C	1
Total Device Dissipation (FR-4 100 mm2, 1 oz)	PD			954	mW	TA = 25°C, FR-4 @ 100 mm2, 1 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (100 mm2, 1 oz)	RθJA			131	°C/W	FR-4 @ 100 mm2, 1 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (100 mm2, 1 oz)	RψJL4			40.8	°C/W	FR-4 @ 100 mm2, 1 oz. copper, still air	2
Total Device Dissipation (FR-4 100 mm2, 2 oz)	PD			1074	mW	TA = 25°C, FR-4 @ 100 mm2, 2 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (100 mm2, 2 oz)	RθJA			116	°C/W	FR-4 @ 100 mm2, 2 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (100 mm2, 2 oz)	RψJL4			39.9	°C/W	FR-4 @ 100 mm2, 2 oz. copper, still air	2
Total Device Dissipation (FR-4 300 mm2, 1 oz)	PD			1150	mW	TA = 25°C, FR-4 @ 300 mm2, 1 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (300 mm2, 1 oz)	RθJA			109	°C/W	FR-4 @ 300 mm2, 1 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (300 mm2, 1 oz)	RψJL4			42	°C/W	FR-4 @ 300 mm2, 1 oz. copper, still air	2
Total Device Dissipation (FR-4 300 mm2, 2 oz)	PD			1300	mW	TA = 25°C, FR-4 @ 300 mm2, 2 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (300 mm2, 2 oz)	RθJA			96	°C/W	FR-4 @ 300 mm2, 2 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (300 mm2, 2 oz)	RψJL4			39.4	°C/W	FR-4 @ 300 mm2, 2 oz. copper, still air	2
Total Device Dissipation (FR-4 500 mm2, 1 oz)	PD			1214	mW	TA = 25°C, FR-4 @ 500 mm2, 1 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (500 mm2, 1 oz)	RθJA			103	°C/W	FR-4 @ 500 mm2, 1 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (500 mm2, 1 oz)	RψJL4			40.2	°C/W	FR-4 @ 500 mm2, 1 oz. copper, still air	2
Total Device Dissipation (FR-4 500 mm2, 2 oz)	PD			1389	mW	TA = 25°C, FR-4 @ 500 mm2, 2 oz. copper, still air	2
Thermal Resistance Junction-to-Ambient (500 mm2, 2 oz)	RθJA			90	°C/W	FR-4 @ 500 mm2, 2 oz. copper, still air	2
Thermal Reference Junction-to-Lead 4 (500 mm2, 2 oz)	RψJL4			37.7	°C/W	FR-4 @ 500 mm2, 2 oz. copper, still air	2
Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		2
Voltage Overhead	Voverhead		1.8		V	Voverhead = Vin - VLEDs, typical value for 70% Ireg(SS)	2
Capacitance	C		2.6		pF	Vak = 7.5 V, f = 1 MHz, 0.02 V RMS	2
Capacitance	C		6.9		pF	Vak = 0 V, f = 1 MHz, 0.02 V RMS	2
Derating above 25°C (100 mm2, 1 oz)	PD			7.6	mW/°C	FR-4 @ 100 mm2, 1 oz. copper, still air	2
Derating above 25°C (100 mm2, 2 oz)	PD			8.6	mW/°C	FR-4 @ 100 mm2, 2 oz. copper, still air	2
Derating above 25°C (300 mm2, 1 oz)	PD			9.2	mW/°C	FR-4 @ 300 mm2, 1 oz. copper, still air	2
Derating above 25°C (300 mm2, 2 oz)	PD			10.4	mW/°C	FR-4 @ 300 mm2, 2 oz. copper, still air	2
Derating above 25°C (500 mm2, 1 oz)	PD			9.7	mW/°C	FR-4 @ 500 mm2, 1 oz. copper, still air	2
Derating above 25°C (500 mm2, 2 oz)	PD			11.1	mW/°C	FR-4 @ 500 mm2, 2 oz. copper, still air	2

CAD (KiCad official)

Symbol: NSI45030AZT1G
Footprint: Package_TO_SOT_SMD:SOT-223
3D model: SOT-223-4 (KiCad packages3D, STEP)
3D model files: nsi45030azt1g-etched.step / nsi45030azt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi45030azt1g.step / nsi45030azt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (7 pp, sha256 7e0412cecdde7146, retrieved 2026-10-23, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF