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NSI1311-Q1SWVR

NOVOSENSE(纳芯微) · Isolation Amplifiers · SOP-8-300mil

NSI1311-Q1SWVR from NOVOSENSE(纳芯微), in a SOP-8-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Power supply for isolator side 1, 3.0 V to 5.5 V; VDD1 undervoltage detection threshold is 1.8 V to 2.7 V (falling) and absolute maximum supply is 6.5 V.
2 VIN power_in Single-ended analog input with linear full-scale range 0.02 V to 2 V; if the input exceeds GND1 - 6 V to VDD1 + 0.5 V, the input current must be limited to 10 mA.
3 SHTDN input Active-high shutdown input, internally pulled up through a 100 kΩ (typical) resistor, with VIH of 0.7×VDD1 minimum and VIL of 0.3×VDD1 maximum, and it should be tied to GND1 for normal operation.
4 GND1 power_in Ground 1, the ground reference for isolator side 1.
5 GND2 power_in Ground 2, the ground reference for isolator side 2.
6 OUTN output Negative analog differential output with a fixed gain of 1, limited to GND2 - 0.5 V to VDD2 + 0.5 V and an output current of ±10 mA per pin.
7 OUTP output Positive analog differential output with a fixed gain of 1, limited to GND2 - 0.5 V to VDD2 + 0.5 V and an output current of ±10 mA per pin.
8 VDD2 power_in Power supply for isolator side 2, 3.0 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer NOVOSENSE(纳芯微)
Package SOP-8-300mil
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Side1 Power Supply VDD1 3 5 5.5 V 4
Side2 Power Supply VDD2 3 3.3 5.5 V 4
Linear differential input full scale voltage VFSR 0.02 2 V 4
Operating Ambient Temperature TA -40 125 ℃ 4
Differential input voltage before clipping output VClipping 2.56 V 4
Power Supply Voltage VDD1, VDD2 -0.3 6.5 V 4
Output current per Output Pin Io -10 10 mA 4
Operating Temperature TOPR -40 125 ℃ 4
Junction Temperature TJ -40 150 ℃ 4
Storage Temperature TSTG -55 150 ℃ 4
Electrostatic discharge HBM HBM -2000 2000 V Human body model, per AEC-Q100-002-RevD 4
Electrostatic discharge CDM CDM -1000 1000 V Charged device model, per AEC-Q100-011-RevB 4
Side1 Supply Voltage VDD1 3 5 5.5 V 5
Side2 Supply Voltage VDD2 3 3.3 5.5 V 5
Side1 Supply Current IDD1 11.4 15.1 mA SHTDN = LOW 5
Side1 Supply Current in shutdown IDD1 1 μA SHTDN = HIGH 5
Side2 Supply Current IDD2 6.3 8.4 mA 5
VDD1 undervoltage detection threshold voltage VDD1UV 1.8 2.3 2.7 V VDD1 falling 5
Input offset voltage VOS -1.5 0.4 1.5 mV VIN = 1V 5
Input offset drift TCVOS -5 10 30 μV/℃ 5
Input bias current IIB -15 3.5 15 nA VIN = GND1 5
Input bias current drift TCIIB -10 10 pA/℃ 5
Gain error EG -0.3 0.05 0.3 % 5
Gain error thermal drift TCEG -45 5 45 ppm/℃ 5
Nonlinearity -0.05 0.01 0.05 % 0.02V≤VIN≤0.1V 5
Nonlinearity -0.04 0.01 0.04 % 0.1V≤VIN≤2V 5
Nonlinearity drift -1 1 ppm/℃ 5
Signal to noise ratio SNR 78 82 dB VIN = 1.8V, fIN = 1kHz, BW = 10kHz 5
Common-mode output voltage VCMout 1.35 1.4 1.46 V 5
Input offset current/voltage analog input capacitance CIN 7 pF fIN = 275kHz 5
Failsafe differential output voltage VFAILSAFE -2.53 -2.44 V SHTDN active, or VDD1 missing 6
Common-mode transient immunity CMTI 100 150 kV/μs 6
Digital input current IIN -70 1 µA GND1 ≤ VSHTDN ≤ VDD1 6
Low-level input voltage VIL -0.3 V 6
Rising time of OUTP, OUTN tr 1.3 μs 6
Falling time of OUTP, OUTN tf 1.3 μs 6
INP, INN to OUTP, OUTN signal delay (50% - 50%) tPD 1.6 2.1 μs 6
Analog setting time tAS 0.5 ms VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to OUTP, OUTN valid, 0.1% settling 6
Device enable time tEN 80 100 μs SHTDN high to low 6
Shutdown time tSHTDN 1.2 5 μs SHTDN low to high 6
Power supply rejection ratio DC vs VDD1 PSRRdc -78 dB PSRR vs VDD1, at DC 6
Power supply rejection ratio AC vs VDD1 PSRRac -75 dB PSRR vs VDD1, 100mV and 10kHz ripple 6
Power supply rejection ratio DC vs VDD2 PSRRdc -82 dB PSRR vs VDD2, at DC 6
Power supply rejection ratio AC vs VDD2 PSRRac -74 dB PSRR vs VDD2, 100mV and 10kHz ripple 6
Output resistance ROUT 0.2 Ω 6
Total harmonic distortion THD -87 dB VIN = 1.8V, fIN = 10kHz, BW = 100kHz 5
Output noise 210 µVRMS VIN = 1V, BW = 100kHz 5
Signal to noise ratio SNR 70 dB VIN = 1.8V, fIN = 10kHz, BW = 100kHz 5
Input resistance RIN 1 GΩ 5
Input capacitance (digital SHTDN) CIN 5 pF 6
Output bandwidth BW 400 kHz 6
Junction-to-ambient thermal resistance RθJA 86 ℃/W 4
Junction-to-case (top) thermal resistance RθJC(top) 28 ℃/W 4
Junction-to-board thermal resistance RθJB 42 ℃/W 4
Junction-to-top characterization parameter ΨJT 4 ℃/W 4
Junction-to-board characterization parameter ΨJB 42 ℃/W 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing abs 1.1 Add SOW8 board layout example and update insulation characteristics 2021/7/17 1.2 Add Tj in absolute maximum ratings and update DTI in 6.1 2022/4/13 16

CAD (KiCad official)

  • Symbol: NSI1311-Q1SWVR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-300mil (KiCad packages3D, STEP)
  • 3D model files: nsi1311-q1swvr-etched.step / nsi1311-q1swvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi1311-q1swvr.step / nsi1311-q1swvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NOVOSENSE(纳芯微) datasheet (17 pp, sha256 8bbffec1945bcdf7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF