component

NRVBA160NT3G

Public Made by Adom

by adom

onsemi Schottky Barrier Diodes (SBD), SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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NRVBA160NT3G

onsemi · Schottky Barrier Diodes (SBD) · SMA

NRVBA160NT3G from onsemi, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode lead, indicated by the polarity band on the SMA package (Style 1); device is rated 60 V VRRM/VR and 1.0 A average rectified forward current at TC = 105°C.
2 ANODE passive Anode lead of the Schottky barrier rectifier in the SMA package (Style 1), with maximum forward voltage of 0.510 V at IF = 1.0 A, TJ = 25°C.

Key specifications

Parameter Value
Manufacturer onsemi
Package SMA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Repetitive Reverse Voltage / Working Peak / DC Blocking Voltage VRRM 60 V VRRM, VRWM, VR 2
Average Rectified Forward Current IO 1 A At Rated VR, TC = 105°C 2
Average Rectified Forward Current IO 2.1 A At Rated VR, TC = 70°C 2
Non-Repetitive Peak Surge Current IFSM 60 A Surge applied at rated load conditions halfwave, single phase, 60 Hz 2
Storage/Operating Case Temperature Tstg, TC -55 150 °C 2
Operating Junction Temperature TJ -55 150 °C Note 1 2
Voltage Rate of Change dv/dt 10000 V/s Rated VR, TJ = 25°C 2
Thermal Resistance, Junction-to-Lead RθJL 35 °C/W Note 2: 2in square PC board, 1in square pad, FR4 2
Thermal Resistance, Junction-to-Ambient RθJA 86 °C/W Note 2: 2in square PC board, 1in square pad, FR4 2
Maximum Instantaneous Forward Voltage VF 0.51 V IF = 1.0 A, TJ = 25°C 2
Maximum Instantaneous Forward Voltage VF 0.475 V IF = 1.0 A, TJ = 125°C 2
Maximum Instantaneous Reverse Current IR 0.2 mA VR = 60 V, TJ = 25°C 2
Maximum Instantaneous Reverse Current IR 20 mA VR = 60 V, TJ = 125°C 2

CAD (KiCad official)

  • Symbol: NRVBA160NT3G
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA (KiCad packages3D, STEP)
  • 3D model files: nrvba160nt3g-etched.step / nrvba160nt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nrvba160nt3g.step / nrvba160nt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 55ba0c4e24ad98a1, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF