component
NRVBA160NT3G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNRVBA160NT3G
onsemi · Schottky Barrier Diodes (SBD) · SMA
NRVBA160NT3G from onsemi, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode lead, indicated by the polarity band on the SMA package (Style 1); device is rated 60 V VRRM/VR and 1.0 A average rectified forward current at TC = 105°C. |
| 2 | ANODE | passive | Anode lead of the Schottky barrier rectifier in the SMA package (Style 1), with maximum forward voltage of 0.510 V at IF = 1.0 A, TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak / DC Blocking Voltage | VRRM | 60 | V | VRRM, VRWM, VR | 2 | ||
| Average Rectified Forward Current | IO | 1 | A | At Rated VR, TC = 105°C | 2 | ||
| Average Rectified Forward Current | IO | 2.1 | A | At Rated VR, TC = 70°C | 2 | ||
| Non-Repetitive Peak Surge Current | IFSM | 60 | A | Surge applied at rated load conditions halfwave, single phase, 60 Hz | 2 | ||
| Storage/Operating Case Temperature | Tstg, TC | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | Note 1 | 2 | |
| Voltage Rate of Change | dv/dt | 10000 | V/s | Rated VR, TJ = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Lead | RθJL | 35 | °C/W | Note 2: 2in square PC board, 1in square pad, FR4 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 86 | °C/W | Note 2: 2in square PC board, 1in square pad, FR4 | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.51 | V | IF = 1.0 A, TJ = 25°C | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.475 | V | IF = 1.0 A, TJ = 125°C | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 0.2 | mA | VR = 60 V, TJ = 25°C | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 20 | mA | VR = 60 V, TJ = 125°C | 2 |
CAD (KiCad official)
- Symbol:
NRVBA160NT3G - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
nrvba160nt3g-etched.step/nrvba160nt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nrvba160nt3g.step/nrvba160nt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
55ba0c4e24ad98a1, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).