component
NP6003VR
Public Made by Adomby adom
NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
NP6003VR
NATLINEAR · MOSFETs · SOT-23
NP6003VR from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V (VGS). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.1 A at TC=25°C (1 A at TA=25°C). |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is limited to 60 V and continuous drain current ID is 3 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 60 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TJ = 150 °C, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 2 | A | TJ = 150 °C, TC=70°C | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | TJ = 150 °C, TA=25°C | 1 | ||
| Continuous Drain Current | ID | 1.3 | A | TJ = 150 °C, TA=70°C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC=25°C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | TA=25°C | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | t = 300 µs | 1 | ||
| Maximum power dissipation | PD | 2.5 | W | TC=25°C | 1 | ||
| Maximum power dissipation | PD | 1.6 | W | TC=70°C | 2 | ||
| Maximum power dissipation | PD | 1.25 | W | TA=25°C | 2 | ||
| Maximum power dissipation | PD | 0.8 | W | TA=70°C | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 100 | 130 | ℃/W | t ≤ 5 s | 2 | |
| Maximum Junction-to-Ambient | RθJA | 175 | ℃/W | Steady state (note d) | 2 | ||
| Maximum Junction-to-Foot (Drain) | RθJF | 60 | 75 | ℃/W | Steady state | 2 | |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | 30 | µA | TJ=85°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 78 | 90 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 88 | 100 | mΩ | VGS=4.5V, ID=2A | 2 | |
| On Status Drain Current | ID(ON) | 3 | A | VDS=10V, VGS=10V | 2 | ||
| Diode Forward Voltage | VSD | 0.75 | 1.1 | V | ISD=1A, VGS=0V | 2 | |
| Diode Continuous Forward Current | IS | 3 | A | 2 |
CAD (KiCad official)
- Symbol:
NP6003VR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
np6003vr-etched.step/np6003vr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np6003vr.step/np6003vr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (3 pp, sha256
8264d8cf00a76ec7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NP6003VR
**NATLINEAR** · MOSFETs · SOT-23
NP6003VR from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V (VGS). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.1 A at TC=25°C (1 A at TA=25°C). |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is limited to 60 V and continuous drain current ID is 3 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 60 | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3 | A | TJ = 150 °C, TC=25°C | 1 |
| Continuous Drain Current | ID | | | 2 | A | TJ = 150 °C, TC=70°C | 1 |
| Continuous Drain Current | ID | | | 1.6 | A | TJ = 150 °C, TA=25°C | 1 |
| Continuous Drain Current | ID | | | 1.3 | A | TJ = 150 °C, TA=70°C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC=25°C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 1 | A | TA=25°C | 1 |
| Pulsed Drain Current | IDM | | | 12 | A | t = 300 µs | 1 |
| Maximum power dissipation | PD | | | 2.5 | W | TC=25°C | 1 |
| Maximum power dissipation | PD | | | 1.6 | W | TC=70°C | 2 |
| Maximum power dissipation | PD | | | 1.25 | W | TA=25°C | 2 |
| Maximum power dissipation | PD | | | 0.8 | W | TA=70°C | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 2 |
| Maximum Junction-to-Ambient | RθJA | | 100 | 130 | ℃/W | t ≤ 5 s | 2 |
| Maximum Junction-to-Ambient | RθJA | | | 175 | ℃/W | Steady state (note d) | 2 |
| Maximum Junction-to-Foot (Drain) | RθJF | | 60 | 75 | ℃/W | Steady state | 2 |
| Drain-source breakdown voltage | BVDSS | 60 | | | V | VGS=0V, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | 30 | µA | TJ=85°C | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate threshold voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 78 | 90 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 88 | 100 | mΩ | VGS=4.5V, ID=2A | 2 |
| On Status Drain Current | ID(ON) | 3 | | | A | VDS=10V, VGS=10V | 2 |
| Diode Forward Voltage | VSD | | 0.75 | 1.1 | V | ISD=1A, VGS=0V | 2 |
| Diode Continuous Forward Current | IS | | | 3 | A | | 2 |
## CAD (KiCad official)
- Symbol: `NP6003VR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `np6003vr-etched.step` / `np6003vr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `np6003vr.step` / `np6003vr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NATLINEAR datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233851529363456) (3 pp, sha256 `8264d8cf00a76ec7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/np6003vr-datasheet.pdf)