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NP6003VR

Public Made by Adom

by adom

NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NP6003VR

NATLINEAR · MOSFETs · SOT-23

NP6003VR from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V (VGS).
2 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is 2.1 A at TC=25°C (1 A at TA=25°C).
3 D passive Drain terminal of the N-channel MOSFET; drain-source voltage VDS is limited to 60 V and continuous drain current ID is 3 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 1
Gate-source voltage VGS -20 20 V 1
Continuous Drain Current ID 3 A TJ = 150 °C, TC=25°C 1
Continuous Drain Current ID 2 A TJ = 150 °C, TC=70°C 1
Continuous Drain Current ID 1.6 A TJ = 150 °C, TA=25°C 1
Continuous Drain Current ID 1.3 A TJ = 150 °C, TA=70°C 1
Continuous Source-Drain Diode Current IS 2.1 A TC=25°C 1
Continuous Source-Drain Diode Current IS 1 A TA=25°C 1
Pulsed Drain Current IDM 12 A t = 300 µs 1
Maximum power dissipation PD 2.5 W TC=25°C 1
Maximum power dissipation PD 1.6 W TC=70°C 2
Maximum power dissipation PD 1.25 W TA=25°C 2
Maximum power dissipation PD 0.8 W TA=70°C 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient RθJA 100 130 ℃/W t ≤ 5 s 2
Maximum Junction-to-Ambient RθJA 175 ℃/W Steady state (note d) 2
Maximum Junction-to-Foot (Drain) RθJF 60 75 ℃/W Steady state 2
Drain-source breakdown voltage BVDSS 60 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=60V, VGS=0V 2
Zero gate voltage drain current IDSS 30 µA TJ=85°C 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) 1.2 1.9 2.5 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 78 90 mΩ VGS=10V, ID=3A 2
Drain-source on-state resistance RDS(ON) 88 100 mΩ VGS=4.5V, ID=2A 2
On Status Drain Current ID(ON) 3 A VDS=10V, VGS=10V 2
Diode Forward Voltage VSD 0.75 1.1 V ISD=1A, VGS=0V 2
Diode Continuous Forward Current IS 3 A 2

CAD (KiCad official)

  • Symbol: NP6003VR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: np6003vr-etched.step / np6003vr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np6003vr.step / np6003vr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (3 pp, sha256 8264d8cf00a76ec7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF