component
NP3415EVR-G
Public Made by Adomby adom
NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
NP3415EVR-G
NATLINEAR · MOSFETs · SOT-23
NP3415EVR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±8 V (VGS, absolute maximum ratings). |
| 2 | S | passive | Source of the P-channel MOSFET; the source-drain diode continuous current is rated at -1.4 A at TC=25°C and -1 A at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is -20 V and continuous drain current is -4 A at TC=25°C (-3.7 A at TA=25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | -20 | V | VGS=0V, ID=-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-20V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -10 | 10 | µA | VDS=0V, VGS=±8V | 2 | |
| Gate threshold voltage | VGS(th) | -0.4 | -0.59 | -0.9 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 38 | 45 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 46 | 55 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Forward transconductance | gfs | 8 | S | VDS=-5V, ID=-4A | 2 | ||
| Diode forward voltage | VSD | -0.81 | -1.2 | V | VGS=0V, Is=-1.25A | 3 | |
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TC=25°C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TC=70°C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.7 | A | TA=25°C (note b,c), TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -2.9 | A | TA=70°C (note b,c), TJ = 150 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1.4 | A | TC=25°C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1 | A | TA=25°C (note b,c) | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | t = 300 µs | 1 | ||
| Maximum power dissipation | PD | 1.7 | W | TC=25°C | 2 | ||
| Maximum power dissipation | PD | 1.1 | W | TC=70°C | 2 | ||
| Maximum power dissipation | PD | 1 | W | TA=25°C (note b,c) | 2 | ||
| Maximum power dissipation | PD | 0.6 | W | TA=70°C (note b,c) | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 100 | 130 | °C/W | t ≤ 5 s (notes b, d) | 2 | |
| Maximum Junction-to-Ambient | RθJA | 175 | °C/W | steady state (note d) | 2 | ||
| Maximum Junction-to-Foot (Drain) | RθJF | 60 | 75 | °C/W | steady state | 2 |
CAD (KiCad official)
- Symbol:
NP3415EVR-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
np3415evr-g-etched.step/np3415evr-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np3415evr-g.step/np3415evr-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (6 pp, sha256
8713548459ff322e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NP3415EVR-G
**NATLINEAR** · MOSFETs · SOT-23
NP3415EVR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±8 V (VGS, absolute maximum ratings). |
| 2 | S | passive | Source of the P-channel MOSFET; the source-drain diode continuous current is rated at -1.4 A at TC=25°C and -1 A at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is -20 V and continuous drain current is -4 A at TC=25°C (-3.7 A at TA=25°C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250µA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS=-20V, VGS=0V | 2 |
| Gate-body leakage | IGSS | -10 | | 10 | µA | VDS=0V, VGS=±8V | 2 |
| Gate threshold voltage | VGS(th) | -0.4 | -0.59 | -0.9 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 38 | 45 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 46 | 55 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Forward transconductance | gfs | 8 | | | S | VDS=-5V, ID=-4A | 2 |
| Diode forward voltage | VSD | | -0.81 | -1.2 | V | VGS=0V, Is=-1.25A | 3 |
| Drain-source voltage | VDS | -20 | | | V | | 1 |
| Gate-source voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | -4 | | | A | TC=25°C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -3.5 | | | A | TC=70°C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -3.7 | | | A | TA=25°C (note b,c), TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -2.9 | | | A | TA=70°C (note b,c), TJ = 150 °C | 1 |
| Continuous Source-Drain Diode Current | IS | -1.4 | | | A | TC=25°C | 1 |
| Continuous Source-Drain Diode Current | IS | -1 | | | A | TA=25°C (note b,c) | 1 |
| Pulsed Drain Current | IDM | -12 | | | A | t = 300 µs | 1 |
| Maximum power dissipation | PD | | | 1.7 | W | TC=25°C | 2 |
| Maximum power dissipation | PD | | | 1.1 | W | TC=70°C | 2 |
| Maximum power dissipation | PD | | | 1 | W | TA=25°C (note b,c) | 2 |
| Maximum power dissipation | PD | | | 0.6 | W | TA=70°C (note b,c) | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 2 |
| Maximum Junction-to-Ambient | RθJA | | 100 | 130 | °C/W | t ≤ 5 s (notes b, d) | 2 |
| Maximum Junction-to-Ambient | RθJA | | | 175 | °C/W | steady state (note d) | 2 |
| Maximum Junction-to-Foot (Drain) | RθJF | | 60 | 75 | °C/W | steady state | 2 |
## CAD (KiCad official)
- Symbol: `NP3415EVR-G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `np3415evr-g-etched.step` / `np3415evr-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `np3415evr-g.step` / `np3415evr-g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NATLINEAR datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590230773451427840) (6 pp, sha256 `8713548459ff322e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/np3415evr-g-datasheet.pdf)