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NP3415EVR-G

Public Made by Adom

by adom

NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NP3415EVR-G

NATLINEAR · MOSFETs · SOT-23

NP3415EVR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is limited to ±8 V (VGS, absolute maximum ratings).
2 S passive Source of the P-channel MOSFET; the source-drain diode continuous current is rated at -1.4 A at TC=25°C and -1 A at TA=25°C.
3 D passive Drain of the P-channel MOSFET; drain-source voltage is -20 V and continuous drain current is -4 A at TC=25°C (-3.7 A at TA=25°C).

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS -20 V VGS=0V, ID=-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS=-20V, VGS=0V 2
Gate-body leakage IGSS -10 10 µA VDS=0V, VGS=±8V 2
Gate threshold voltage VGS(th) -0.4 -0.59 -0.9 V VDS=VGS, ID=-250µA 2
Drain-source on-state resistance RDS(ON) 38 45 mΩ VGS=-4.5V, ID=-4A 2
Drain-source on-state resistance RDS(ON) 46 55 mΩ VGS=-2.5V, ID=-4A 2
Forward transconductance gfs 8 S VDS=-5V, ID=-4A 2
Diode forward voltage VSD -0.81 -1.2 V VGS=0V, Is=-1.25A 3
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -8 8 V 1
Continuous Drain Current ID -4 A TC=25°C, TJ = 150 °C 1
Continuous Drain Current ID -3.5 A TC=70°C, TJ = 150 °C 1
Continuous Drain Current ID -3.7 A TA=25°C (note b,c), TJ = 150 °C 1
Continuous Drain Current ID -2.9 A TA=70°C (note b,c), TJ = 150 °C 1
Continuous Source-Drain Diode Current IS -1.4 A TC=25°C 1
Continuous Source-Drain Diode Current IS -1 A TA=25°C (note b,c) 1
Pulsed Drain Current IDM -12 A t = 300 µs 1
Maximum power dissipation PD 1.7 W TC=25°C 2
Maximum power dissipation PD 1.1 W TC=70°C 2
Maximum power dissipation PD 1 W TA=25°C (note b,c) 2
Maximum power dissipation PD 0.6 W TA=70°C (note b,c) 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 2
Maximum Junction-to-Ambient RθJA 100 130 °C/W t ≤ 5 s (notes b, d) 2
Maximum Junction-to-Ambient RθJA 175 °C/W steady state (note d) 2
Maximum Junction-to-Foot (Drain) RθJF 60 75 °C/W steady state 2

CAD (KiCad official)

  • Symbol: NP3415EVR-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: np3415evr-g-etched.step / np3415evr-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np3415evr-g.step / np3415evr-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (6 pp, sha256 8713548459ff322e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF