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NP2N10VR-G

Public Made by Adom

by adom

NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NP2N10VR-G

NATLINEAR · MOSFETs · SOT-23

NP2N10VR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±20 V (VGS absolute maximum).
2 S passive Source terminal; the source-drain diode is rated at a continuous current of 2.1 A at TC=25°C.
3 D passive Drain terminal; the drain-source voltage is rated at 100 V (VDS) with continuous drain current of 2 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 2 A TJ = 150 °C; TC=25°C 1
Continuous drain current ID 1.7 A TJ = 150 °C; TC=70°C 1
Continuous drain current ID 1.6 A TJ = 150 °C; TA=25°C (notes b,c) 1
Continuous drain current ID 1.3 A TJ = 150 °C; TA=70°C (notes b,c) 1
Continuous source-drain diode current IS 2.1 A TC=25°C 1
Continuous source-drain diode current IS 1 A TA=25°C (notes b,c) 1
Pulsed drain current IDM 5 A t = 300 µs 1
Maximum power dissipation PD 2.5 W TC=25°C 2
Maximum power dissipation PD 1.6 W TC=70°C 2
Maximum power dissipation PD 1.25 W TA=25°C (notes b,c) 2
Maximum power dissipation PD 0.8 W TA=70°C (notes b,c) 2
Operating junction and storage temperature range TJ,TSTG -55 150 ℃ 2
Maximum junction-to-ambient thermal resistance RθJA 100 130 ℃/W t ≤ 5 s (notes b,d) 2
Maximum junction-to-ambient thermal resistance (steady state) RθJA 175 ℃/W steady state conditions (note d) 2
Maximum junction-to-foot (drain) thermal resistance RθJF 60 75 ℃/W steady state 2
Drain-source breakdown voltage BVDSS 100 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=100V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) 1.2 1.9 2.5 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 200 220 mΩ VGS=10V, ID=2A 2
Drain-source on-state resistance RDS(ON) 220 260 mΩ VGS=4.5V, ID=2A 2
Forward transconductance gfs 1 S VDS=5V, ID=1A 2
Diode forward voltage VSD 0.76 1.16 V VGS=0V, Is=2A 2

CAD (KiCad official)

  • Symbol: NP2N10VR-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: np2n10vr-g-etched.step / np2n10vr-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np2n10vr-g.step / np2n10vr-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (5 pp, sha256 c2d8670080e06125, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF