component
NP2N10VR-G
Public Made by Adomby adom
NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNP2N10VR-G
NATLINEAR · MOSFETs · SOT-23
NP2N10VR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V (VGS absolute maximum). |
| 2 | S | passive | Source terminal; the source-drain diode is rated at a continuous current of 2.1 A at TC=25°C. |
| 3 | D | passive | Drain terminal; the drain-source voltage is rated at 100 V (VDS) with continuous drain current of 2 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 2 | A | TJ = 150 °C; TC=25°C | 1 | ||
| Continuous drain current | ID | 1.7 | A | TJ = 150 °C; TC=70°C | 1 | ||
| Continuous drain current | ID | 1.6 | A | TJ = 150 °C; TA=25°C (notes b,c) | 1 | ||
| Continuous drain current | ID | 1.3 | A | TJ = 150 °C; TA=70°C (notes b,c) | 1 | ||
| Continuous source-drain diode current | IS | 2.1 | A | TC=25°C | 1 | ||
| Continuous source-drain diode current | IS | 1 | A | TA=25°C (notes b,c) | 1 | ||
| Pulsed drain current | IDM | 5 | A | t = 300 µs | 1 | ||
| Maximum power dissipation | PD | 2.5 | W | TC=25°C | 2 | ||
| Maximum power dissipation | PD | 1.6 | W | TC=70°C | 2 | ||
| Maximum power dissipation | PD | 1.25 | W | TA=25°C (notes b,c) | 2 | ||
| Maximum power dissipation | PD | 0.8 | W | TA=70°C (notes b,c) | 2 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum junction-to-ambient thermal resistance | RθJA | 100 | 130 | ℃/W | t ≤ 5 s (notes b,d) | 2 | |
| Maximum junction-to-ambient thermal resistance (steady state) | RθJA | 175 | ℃/W | steady state conditions (note d) | 2 | ||
| Maximum junction-to-foot (drain) thermal resistance | RθJF | 60 | 75 | ℃/W | steady state | 2 | |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1.2 | 1.9 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 200 | 220 | mΩ | VGS=10V, ID=2A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 220 | 260 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Forward transconductance | gfs | 1 | S | VDS=5V, ID=1A | 2 | ||
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=2A | 2 |
CAD (KiCad official)
- Symbol:
NP2N10VR-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
np2n10vr-g-etched.step/np2n10vr-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np2n10vr-g.step/np2n10vr-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (5 pp, sha256
c2d8670080e06125, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).