# NM8205

**Shandong Jingdao Microelectronics** · MOSFETs · SOT-26

NM8205 from Shandong Jingdao Microelectronics, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual N-channel, 20V, 5A, RDS(ON)<26mΩ at VGS=4.5V). |
| 2 | D | passive | Common drain of the dual N-channel MOSFET pair (VDSS 20V, ID 5A at TA=25℃), internally tied with pin 5. |
| 3 | S2 | passive | Source of MOSFET 2 (dual N-channel, 20V, 5A, RDS(ON)<26mΩ at VGS=4.5V). |
| 4 | G2 | input | Gate of MOSFET 2, with maximum gate-source voltage of ±10V. |
| 5 | D | passive | Common drain of the dual N-channel MOSFET pair (VDSS 20V, ID 5A at TA=25℃), internally tied with pin 2. |
| 6 | G1 | input | Gate of MOSFET 1, with maximum gate-source voltage of ±10V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGSS | -10 |  | 10 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 3.2 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A | Pulse width limited by maximum junction temperature | 1 |
| Power Dissipation | PD |  |  | 1.5 | W | TA=25℃ | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 83.3 | ℃/W |  | 1 |
| Operating and Storage Temperature Range | TJ,TSTG | -50 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V,ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1.1 | V | VGS=VDS,ID=250uA | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V,VGS=±10V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=20V,VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `NM8205`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `nm8205-etched.step` / `nm8205-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nm8205.step` / `nm8205.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/nm8205-datasheet.pdf) (6 pp, sha256 `a692d630e6684299`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nm8205-datasheet.pdf)