component
NM8205
Public Made by Adomby adom
Shandong Jingdao Microelectronics MOSFETs, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNM8205
Shandong Jingdao Microelectronics · MOSFETs · SOT-26
NM8205 from Shandong Jingdao Microelectronics, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual N-channel, 20V, 5A, RDS(ON)<26mΩ at VGS=4.5V). |
| 2 | D | passive | Common drain of the dual N-channel MOSFET pair (VDSS 20V, ID 5A at TA=25℃), internally tied with pin 5. |
| 3 | S2 | passive | Source of MOSFET 2 (dual N-channel, 20V, 5A, RDS(ON)<26mΩ at VGS=4.5V). |
| 4 | G2 | input | Gate of MOSFET 2, with maximum gate-source voltage of ±10V. |
| 5 | D | passive | Common drain of the dual N-channel MOSFET pair (VDSS 20V, ID 5A at TA=25℃), internally tied with pin 2. |
| 6 | G1 | input | Gate of MOSFET 1, with maximum gate-source voltage of ±10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -10 | 10 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 3.2 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83.3 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ,TSTG | -50 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V,ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1.1 | V | VGS=VDS,ID=250uA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±10V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
NM8205 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
nm8205-etched.step/nm8205-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nm8205.step/nm8205.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (6 pp, sha256
a692d630e6684299, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).