component
NDT3055L
Public Made by Adomby adom
UMW MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NDT3055L
UMW · MOSFETs · SOT-223
NDT3055L from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: gate of the logic-level N-channel MOSFET, with gate-source voltage rated VGSS ±20 V and gate threshold VGS(TH) below 2 V. |
| 2 | D | passive | DRAIN: drain of the 60 V N-channel MOSFET, rated for 4 A continuous drain current (ID) and 25 A pulsed; the drain also forms the solder-mounting surface used as the thermal reference. |
| 3 | S | passive | SOURCE: source of the MOSFET, with a maximum continuous body-diode forward current (IS) of 2.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current - Continuous | ID | 4 | A | Note 1a | 1 | ||
| Drain Current - Pulsed | ID | 25 | A | 1 | |||
| Power Dissipation for Single Operation | PD | 3 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 1.3 | W | Note 1b | 1 | ||
| Power Dissipation for Single Operation | PD | 1.1 | W | Note 1c | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -65 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 42 | °C/W | Note 1a, mounted on 1 in² pad of 2oz Cu | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 95 | °C/W | Note 1b, mounted on a pad of 2oz Cu | 4 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 110 | °C/W | Note 1c, mounted on a 0.00123 in² pad of 2oz Cu | 4 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 12 | °C/W | Note 1 | 2 | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, ID=250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | TJ=125°C | 3 | ||
| Gate - Body Leakage, Forward | IGSSF | 100 | nA | VGS=20V, VDS=0V | 3 | ||
| Gate - Body Leakage, Reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2 | V | VDS=VGS, ID=250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=10V, ID=4A | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 120 | mΩ | VGS=4.5V, ID=3.7A | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2.5 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=2.5A | 4 | |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 70 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temp. Coefficient | ΔVGS(th)/TJ | -4 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Input Capacitance | Ciss | 345 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 110 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | ||
| Total Gate Charge | Qg | 13 | nC | VDS=40V, ID=4A, VGS=10V | 4 | ||
| Gate-Source Charge | Qgs | 1.7 | nC | VDS=40V, ID=4A, VGS=10V | 4 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VDS=40V, ID=4A, VGS=10V | 4 |
CAD (KiCad official)
- Symbol:
NDT3055L - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
ndt3055l-etched.step/ndt3055l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ndt3055l.step/ndt3055l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
743815ff1af7b2d5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NDT3055L
**UMW** · MOSFETs · SOT-223
NDT3055L from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: gate of the logic-level N-channel MOSFET, with gate-source voltage rated VGSS ±20 V and gate threshold VGS(TH) below 2 V. |
| 2 | D | passive | DRAIN: drain of the 60 V N-channel MOSFET, rated for 4 A continuous drain current (ID) and 25 A pulsed; the drain also forms the solder-mounting surface used as the thermal reference. |
| 3 | S | passive | SOURCE: source of the MOSFET, with a maximum continuous body-diode forward current (IS) of 2.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Drain Current - Continuous | ID | | | 4 | A | Note 1a | 1 |
| Drain Current - Pulsed | ID | | | 25 | A | | 1 |
| Power Dissipation for Single Operation | PD | | | 3 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD | | | 1.3 | W | Note 1b | 1 |
| Power Dissipation for Single Operation | PD | | | 1.1 | W | Note 1c | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -65 | | 150 | °C | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 42 | °C/W | Note 1a, mounted on 1 in² pad of 2oz Cu | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 95 | °C/W | Note 1b, mounted on a pad of 2oz Cu | 4 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 110 | °C/W | Note 1c, mounted on a 0.00123 in² pad of 2oz Cu | 4 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 12 | °C/W | Note 1 | 2 |
| Drain-source breakdown voltage | BVDSS | 60 | | | V | VGS=0V, ID=250µA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | TJ=125°C | 3 |
| Gate - Body Leakage, Forward | IGSSF | | | 100 | nA | VGS=20V, VDS=0V | 3 |
| Gate - Body Leakage, Reverse | IGSSR | | | -100 | nA | VGS=-20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2 | V | VDS=VGS, ID=250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 100 | mΩ | VGS=10V, ID=4A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 120 | mΩ | VGS=4.5V, ID=3.7A | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 2.5 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V, IS=2.5A | 4 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | | 70 | | mV/°C | ID=250µA, referenced to 25°C | 3 |
| Gate Threshold Voltage Temp. Coefficient | ΔVGS(th)/TJ | | -4 | | mV/°C | ID=250µA, referenced to 25°C | 3 |
| Input Capacitance | Ciss | | 345 | | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Output Capacitance | Coss | | 110 | | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 30 | | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Total Gate Charge | Qg | | 13 | | nC | VDS=40V, ID=4A, VGS=10V | 4 |
| Gate-Source Charge | Qgs | | 1.7 | | nC | VDS=40V, ID=4A, VGS=10V | 4 |
| Gate-Drain Charge | Qgd | | 3.2 | | nC | VDS=40V, ID=4A, VGS=10V | 4 |
## CAD (KiCad official)
- Symbol: `NDT3055L`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `ndt3055l-etched.step` / `ndt3055l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ndt3055l.step` / `ndt3055l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755881378032291840) (9 pp, sha256 `743815ff1af7b2d5`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ndt3055l-datasheet.pdf)