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NDT3055L

Public Made by Adom

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UMW MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NDT3055L

UMW · MOSFETs · SOT-223

NDT3055L from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE: gate of the logic-level N-channel MOSFET, with gate-source voltage rated VGSS ±20 V and gate threshold VGS(TH) below 2 V.
2 D passive DRAIN: drain of the 60 V N-channel MOSFET, rated for 4 A continuous drain current (ID) and 25 A pulsed; the drain also forms the solder-mounting surface used as the thermal reference.
3 S passive SOURCE: source of the MOSFET, with a maximum continuous body-diode forward current (IS) of 2.5 A.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TA=25°C 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current - Continuous ID 4 A Note 1a 1
Drain Current - Pulsed ID 25 A 1
Power Dissipation for Single Operation PD 3 W Note 1a 1
Power Dissipation for Single Operation PD 1.3 W Note 1b 1
Power Dissipation for Single Operation PD 1.1 W Note 1c 1
Operating and Storage Junction Temperature Range TJ, TSTG -65 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 42 °C/W Note 1a, mounted on 1 in² pad of 2oz Cu 2
Thermal Resistance, Junction-to-Ambient RθJA 95 °C/W Note 1b, mounted on a pad of 2oz Cu 4
Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W Note 1c, mounted on a 0.00123 in² pad of 2oz Cu 4
Thermal Resistance, Junction-to-Case RθJC 12 °C/W Note 1 2
Drain-source breakdown voltage BVDSS 60 V VGS=0V, ID=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 10 µA TJ=125°C 3
Gate - Body Leakage, Forward IGSSF 100 nA VGS=20V, VDS=0V 3
Gate - Body Leakage, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.6 2 V VDS=VGS, ID=250µA 3
Static Drain-Source On-Resistance RDS(ON) 100 mΩ VGS=10V, ID=4A 3
Static Drain-Source On-Resistance RDS(ON) 120 mΩ VGS=4.5V, ID=3.7A 3
Maximum Continuous Drain-Source Diode Forward Current IS 2.5 A 4
Drain-Source Diode Forward Voltage VSD 0.8 1.2 V VGS=0V, IS=2.5A 4
Breakdown Voltage Temp. Coefficient ΔBVDSS/ΔTJ 70 mV/°C ID=250µA, referenced to 25°C 3
Gate Threshold Voltage Temp. Coefficient ΔVGS(th)/TJ -4 mV/°C ID=250µA, referenced to 25°C 3
Input Capacitance Ciss 345 pF VGS=0V, VDS=25V, f=1MHz 3
Output Capacitance Coss 110 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse Transfer Capacitance Crss 30 pF VGS=0V, VDS=25V, f=1MHz 3
Total Gate Charge Qg 13 nC VDS=40V, ID=4A, VGS=10V 4
Gate-Source Charge Qgs 1.7 nC VDS=40V, ID=4A, VGS=10V 4
Gate-Drain Charge Qgd 3.2 nC VDS=40V, ID=4A, VGS=10V 4

CAD (KiCad official)

  • Symbol: NDT3055L
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ndt3055l-etched.step / ndt3055l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ndt3055l.step / ndt3055l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 743815ff1af7b2d5, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF