component
NDS352AP
Public Made by Adomby adom
onsemi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NDS352AP
onsemi · MOSFETs · SOT-23-3
NDS352AP from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V continuous (VGSS). |
| 2 | S | passive | Source of the P-channel MOSFET; maximum continuous body-diode source current is −0.42 A (IS). |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is −30 V (VDSS) and continuous drain current is ±0.9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain−Source Voltage | VDSS | -30 | V | 2 | |||
| Gate−Source Voltage − Continuous | VGSS | -20 | 20 | V | 2 | ||
| Maximum Drain Current, Continuous | ID | -0.9 | 0.9 | A | Note 1a | 2 | |
| Maximum Drain Current, Pulsed | -10 | 10 | A | 2 | |||
| Maximum Power Dissipation | PD | 0.5 | W | Note 1a | 2 | ||
| Maximum Power Dissipation | PD | 0.46 | W | Note 1b | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = −250 A | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = −24 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | A | VDS = −24 V, VGS = 0 V, TJ = 125°C | 3 | ||
| Gate-Body Leakage, Forward | IGSSF | -100 | nA | VGS = −20 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage, Reverse | IGSSR | 100 | nA | VGS = 20 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -0.8 | -1.7 | -2.5 | V | VDS = VGS, ID = −250 A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.4 | -2.2 | V | VDS = VGS, ID = −250 A, TJ = 125°C | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 0.45 | 0.5 | Ω | VGS = −4.5 V, ID = −0.9 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.65 | 0.7 | Ω | VGS = −4.5 V, ID = −0.9 A, TJ = 125°C | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.25 | 0.3 | Ω | VGS = −10 V, ID = −1 A | 3 | |
| On-State Drain Current | ID(on) | -2 | A | VGS = −4.5 V, VDS = −5 V | 3 | ||
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = −6 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 | 3 | |
| Turn-On Rise Time | tr | 17 | 30 | ns | 3 | ||
| Turn-Off Delay Time | td(off) | 35 | 70 | ns | 3 | ||
| Turn-Off Fall Time | tf | 30 | 60 | ns | 3 | ||
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD = −10 V, ID = −1 A, VGS = −10 V, RGEN = 50 | 3 | |
| Turn-On Rise Time | tr | 16 | 30 | ns | 3 | ||
| Turn-Off Delay Time | td(off) | 35 | 90 | ns | 3 | ||
| Turn-Off Fall Time | tf | 30 | 90 | ns | 3 | ||
| Total Gate Charge | Qg | 2 | 3 | nC | VDS = −10 V, ID = −0.9 A, VGS = −4.5 V | 3 | |
| Maximum Continuous Source Current | IS | -0.42 | A | 3 | |||
| Maximum Pulsed Drain−Source Diode Forward Current | ISM | -10 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0 V, IS = −0.42 A (Note 2) | 3 | |
| Thermal Resistance, Junction−to−Ambient | RJA | 250 | °C/W | Note 1a; 0.02 in² pad of 2oz copper | 2 | ||
| Thermal Resistance, Junction−to−Ambient | RJA | 270 | °C/W | 0.001 in² pad of 2oz copper | 2 | ||
| Thermal Resistance, Junction−to−Case | RJC | 75 | °C/W | Note 1 | 2 |
CAD (KiCad official)
- Symbol:
NDS352AP - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
nds352ap-etched.step/nds352ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nds352ap.step/nds352ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
a93a4848bdb796c7, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NDS352AP
**onsemi** · MOSFETs · SOT-23-3
NDS352AP from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V continuous (VGSS). |
| 2 | S | passive | Source of the P-channel MOSFET; maximum continuous body-diode source current is −0.42 A (IS). |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is −30 V (VDSS) and continuous drain current is ±0.9 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain−Source Voltage | VDSS | -30 | | | V | | 2 |
| Gate−Source Voltage − Continuous | VGSS | -20 | | 20 | V | | 2 |
| Maximum Drain Current, Continuous | ID | -0.9 | | 0.9 | A | Note 1a | 2 |
| Maximum Drain Current, Pulsed | | -10 | | 10 | A | | 2 |
| Maximum Power Dissipation | PD | | | 0.5 | W | Note 1a | 2 |
| Maximum Power Dissipation | PD | | | 0.46 | W | Note 1b | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0 V, ID = −250 A | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | A | VDS = −24 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | A | VDS = −24 V, VGS = 0 V, TJ = 125°C | 3 |
| Gate-Body Leakage, Forward | IGSSF | | | -100 | nA | VGS = −20 V, VDS = 0 V | 3 |
| Gate-Body Leakage, Reverse | IGSSR | | | 100 | nA | VGS = 20 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | -0.8 | -1.7 | -2.5 | V | VDS = VGS, ID = −250 A | 3 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.4 | -2.2 | V | VDS = VGS, ID = −250 A, TJ = 125°C | 3 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.45 | 0.5 | Ω | VGS = −4.5 V, ID = −0.9 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.65 | 0.7 | Ω | VGS = −4.5 V, ID = −0.9 A, TJ = 125°C | 3 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.25 | 0.3 | Ω | VGS = −10 V, ID = −1 A | 3 |
| On-State Drain Current | ID(on) | -2 | | | A | VGS = −4.5 V, VDS = −5 V | 3 |
| Turn-On Delay Time | td(on) | | 5 | 10 | ns | VDD = −6 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 | 3 |
| Turn-On Rise Time | tr | | 17 | 30 | ns | | 3 |
| Turn-Off Delay Time | td(off) | | 35 | 70 | ns | | 3 |
| Turn-Off Fall Time | tf | | 30 | 60 | ns | | 3 |
| Turn-On Delay Time | td(on) | | 8 | 15 | ns | VDD = −10 V, ID = −1 A, VGS = −10 V, RGEN = 50 | 3 |
| Turn-On Rise Time | tr | | 16 | 30 | ns | | 3 |
| Turn-Off Delay Time | td(off) | | 35 | 90 | ns | | 3 |
| Turn-Off Fall Time | tf | | 30 | 90 | ns | | 3 |
| Total Gate Charge | Qg | | 2 | 3 | nC | VDS = −10 V, ID = −0.9 A, VGS = −4.5 V | 3 |
| Maximum Continuous Source Current | IS | | | -0.42 | A | | 3 |
| Maximum Pulsed Drain−Source Diode Forward Current | ISM | | | -10 | A | | 3 |
| Drain-Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS = 0 V, IS = −0.42 A (Note 2) | 3 |
| Thermal Resistance, Junction−to−Ambient | RJA | | 250 | | °C/W | Note 1a; 0.02 in² pad of 2oz copper | 2 |
| Thermal Resistance, Junction−to−Ambient | RJA | | 270 | | °C/W | 0.001 in² pad of 2oz copper | 2 |
| Thermal Resistance, Junction−to−Case | RJC | | 75 | | °C/W | Note 1 | 2 |
## CAD (KiCad official)
- Symbol: `NDS352AP`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `nds352ap-etched.step` / `nds352ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nds352ap.step` / `nds352ap.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602879009533272064) (9 pp, sha256 `a93a4848bdb796c7`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nds352ap-datasheet.pdf)