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NDS352AP

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NDS352AP

onsemi · MOSFETs · SOT-23-3

NDS352AP from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V continuous (VGSS).
2 S passive Source of the P-channel MOSFET; maximum continuous body-diode source current is −0.42 A (IS).
3 D passive Drain of the P-channel MOSFET; drain-source voltage is −30 V (VDSS) and continuous drain current is ±0.9 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain−Source Voltage VDSS -30 V 2
Gate−Source Voltage − Continuous VGSS -20 20 V 2
Maximum Drain Current, Continuous ID -0.9 0.9 A Note 1a 2
Maximum Drain Current, Pulsed -10 10 A 2
Maximum Power Dissipation PD 0.5 W Note 1a 2
Maximum Power Dissipation PD 0.46 W Note 1b 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0 V, ID = −250 A 3
Zero Gate Voltage Drain Current IDSS -1 A VDS = −24 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS -10 A VDS = −24 V, VGS = 0 V, TJ = 125°C 3
Gate-Body Leakage, Forward IGSSF -100 nA VGS = −20 V, VDS = 0 V 3
Gate-Body Leakage, Reverse IGSSR 100 nA VGS = 20 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) -0.8 -1.7 -2.5 V VDS = VGS, ID = −250 A 3
Gate Threshold Voltage VGS(th) -0.5 -1.4 -2.2 V VDS = VGS, ID = −250 A, TJ = 125°C 3
Static Drain-Source On-Resistance RDS(on) 0.45 0.5 Ω VGS = −4.5 V, ID = −0.9 A 3
Static Drain-Source On-Resistance RDS(on) 0.65 0.7 Ω VGS = −4.5 V, ID = −0.9 A, TJ = 125°C 3
Static Drain-Source On-Resistance RDS(on) 0.25 0.3 Ω VGS = −10 V, ID = −1 A 3
On-State Drain Current ID(on) -2 A VGS = −4.5 V, VDS = −5 V 3
Turn-On Delay Time td(on) 5 10 ns VDD = −6 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 3
Turn-On Rise Time tr 17 30 ns 3
Turn-Off Delay Time td(off) 35 70 ns 3
Turn-Off Fall Time tf 30 60 ns 3
Turn-On Delay Time td(on) 8 15 ns VDD = −10 V, ID = −1 A, VGS = −10 V, RGEN = 50 3
Turn-On Rise Time tr 16 30 ns 3
Turn-Off Delay Time td(off) 35 90 ns 3
Turn-Off Fall Time tf 30 90 ns 3
Total Gate Charge Qg 2 3 nC VDS = −10 V, ID = −0.9 A, VGS = −4.5 V 3
Maximum Continuous Source Current IS -0.42 A 3
Maximum Pulsed Drain−Source Diode Forward Current ISM -10 A 3
Drain-Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0 V, IS = −0.42 A (Note 2) 3
Thermal Resistance, Junction−to−Ambient RJA 250 °C/W Note 1a; 0.02 in² pad of 2oz copper 2
Thermal Resistance, Junction−to−Ambient RJA 270 °C/W 0.001 in² pad of 2oz copper 2
Thermal Resistance, Junction−to−Case RJC 75 °C/W Note 1 2

CAD (KiCad official)

  • Symbol: NDS352AP
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: nds352ap-etched.step / nds352ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds352ap.step / nds352ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 a93a4848bdb796c7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF