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NDS0605-HXY

HXY MOSFET · MOSFETs · SOT-23

NDS0605-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a Gate-Source voltage rating of ±20 V and a threshold of -1.0 to -2.5 V at ID=-250μA.
2 S passive Source of the P-channel MOSFET, with a body-diode forward current of up to -2.0 A.
3 D passive Drain of the P-channel MOSFET, rated for a Drain-Source voltage of -60 V and a continuous drain current of -2 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current (TA=25℃) IDSS -1 μA TA=25℃; VDS=-60V, VGS=0V 2
Zero Gate Voltage Drain Current (TA=125℃) IDSS -100 uA TA=125℃; VDS=-60V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -1 -1.5 -2.5 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance (VGS=-10V) RDS(ON) 160 200 mΩ VGS=-10V, ID=-2A 2
Drain-Source On-State Resistance (VGS=-4.5V) RDS(ON) 200 300 mΩ VGS=-4.5V, ID=-1A 2
Source drain current (Body Diode) IS -2 A TA=25℃ 2
Forward on voltage VSD -0.84 -1.2 V Tj=25℃, ISD=-2A, VGS=0V 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -2 A 1
Drain Current-Pulsed (Note 1) IDM -5.2 A 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 83.3 ℃/W 1

CAD (KiCad official)

  • Symbol: NDS0605-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nds0605-hxy-etched.step / nds0605-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds0605-hxy.step / nds0605-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 76ccc11df7ba435e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF