component
NDS0605-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNDS0605-HXY
HXY MOSFET · MOSFETs · SOT-23
NDS0605-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a Gate-Source voltage rating of ±20 V and a threshold of -1.0 to -2.5 V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET, with a body-diode forward current of up to -2.0 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for a Drain-Source voltage of -60 V and a continuous drain current of -2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | -1 | μA | TA=25℃; VDS=-60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | -100 | uA | TA=125℃; VDS=-60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) | 160 | 200 | mΩ | VGS=-10V, ID=-2A | 2 | |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 200 | 300 | mΩ | VGS=-4.5V, ID=-1A | 2 | |
| Source drain current (Body Diode) | IS | -2 | A | TA=25℃ | 2 | ||
| Forward on voltage | VSD | -0.84 | -1.2 | V | Tj=25℃, ISD=-2A, VGS=0V | 2 | |
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -2 | A | 1 | |||
| Drain Current-Pulsed (Note 1) | IDM | -5.2 | A | 1 | |||
| Maximum Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 83.3 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
NDS0605-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nds0605-hxy-etched.step/nds0605-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nds0605-hxy.step/nds0605-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
76ccc11df7ba435e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).