# NCEP1545G

**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L

NCEP1545G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V. |
| 2 | S | passive | Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V. |
| 3 | S | passive | Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V. |
| 4 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of 2.0 to 4.0 V. |
| 5 | D | passive | Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad. |
| 6 | D | passive | Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad. |
| 7 | D | passive | Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad. |
| 8 | D | passive | Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 150 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 45 | A |  | 1 |
| Drain Current-Continuous | ID (100℃) |  |  | 31.8 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 180 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 110 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 200 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1.14 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 150 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=150V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3.1 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 24 | 28 | mΩ | VGS=10V, ID=20A | 2 |
| Forward Transconductance | gFS | 15 |  |  | S | VDS=5V,ID=20A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=20A | 2 |
| Diode Forward Current | IS |  |  | 45 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCEP1545G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep1545g-etched.step` / `ncep1545g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep1545g.step` / `ncep1545g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588893599795204096) (7 pp, sha256 `eb537952229bc80a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncep1545g-datasheet.pdf)