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NCEP1545G

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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
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ncep1545g-etched.glb ncep1545g: factory component page (tier=lcsc) · Ray 21d ago
ncep1545g-etched.step ncep1545g: factory component page (tier=lcsc) · Ray 21d ago
ncep1545g-hero.glb ncep1545g: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
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package.json Publish 0.1.0 · Ray 21d ago
page.json ncep1545g: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago
README.md ncep1545g: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago

NCEP1545G

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP1545G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V.
2 S passive Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V.
3 S passive Source of the N-channel MOSFET, with the drain-source voltage limited to 150 V.
4 G input Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of 2.0 to 4.0 V.
5 D passive Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad.
6 D passive Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad.
7 D passive Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad.
8 D passive Drain of the MOSFET, rated for 45 A continuous and 180 A pulsed drain current and shorted to the exposed drain pad.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 45 A 1
Drain Current-Continuous ID (100℃) 31.8 A TC=100℃ 1
Pulsed Drain Current IDM 180 A 1
Maximum Power Dissipation PD 110 W 1
Single pulse avalanche energy EAS 200 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.14 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=150V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3.1 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 24 28 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 15 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 45 A 2

CAD (KiCad official)

  • Symbol: NCEP1545G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep1545g-etched.step / ncep1545g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep1545g.step / ncep1545g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 eb537952229bc80a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF