# NCEP039N10D

**Wuxi NCE Power Semiconductor** · MOSFETs · TO-263

NCEP039N10D from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of 2.0 V min, 3.0 V typ and 4.0 V max at ID=250μA. |
| 2 | D | passive | Drain, the middle position shown as D on the TO-263 view; the drawing shows only a trimmed stub there, and the drain is the exposed tab (VDS 100 V, ID 135 A continuous). |
| 3 | S | passive | Source; continuous diode forward current IS is 135 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID |  |  | 135 | A | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | 108 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 540 | A | TC=25℃ unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 220 | W | TC=25℃ unless otherwise noted | 1 |
| Single pulse avalanche energy | EAS |  |  | 1156 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 0.68 |  | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (TO-263) | RDS(ON) |  | 3.5 | 3.9 | mΩ | VGS=10V, ID=65A | 2 |
| Forward Transconductance | gFS | 90 |  |  | S | VDS=5V,ID=65A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=65A | 2 |
| Diode Forward Current | IS |  |  | 135 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCEP039N10D`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ncep039n10d-etched.step` / `ncep039n10d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep039n10d.step` / `ncep039n10d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588893187331407872) (7 pp, sha256 `51ae5911b9bad6b2`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncep039n10d-datasheet.pdf)