component
NCEP039N10D
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP039N10D
Wuxi NCE Power Semiconductor · MOSFETs · TO-263
NCEP039N10D from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of 2.0 V min, 3.0 V typ and 4.0 V max at ID=250μA. |
| 2 | D | passive | Drain, the middle position shown as D on the TO-263 view; the drawing shows only a trimmed stub there, and the drain is the exposed tab (VDS 100 V, ID 135 A continuous). |
| 3 | S | passive | Source; continuous diode forward current IS is 135 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | 135 | A | TC=25℃ unless otherwise noted | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 108 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 540 | A | TC=25℃ unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 220 | W | TC=25℃ unless otherwise noted | 1 | ||
| Single pulse avalanche energy | EAS | 1156 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.68 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (TO-263) | RDS(ON) | 3.5 | 3.9 | mΩ | VGS=10V, ID=65A | 2 | |
| Forward Transconductance | gFS | 90 | S | VDS=5V,ID=65A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=65A | 2 | ||
| Diode Forward Current | IS | 135 | A | 2 |
CAD (KiCad official)
- Symbol:
NCEP039N10D - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ncep039n10d-etched.step/ncep039n10d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep039n10d.step/ncep039n10d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
51ae5911b9bad6b2, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).