# NCEP035N85GU

**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L

NCEP035N85GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 of S1-S3). |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pin 2 of S1-S3). |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pin 3 of S1-S3). |
| 4 | G | input | Gate terminal; VGS rated ±20 V maximum, threshold 2 V to 4 V at 250 µA. |
| 5 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 6 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 7 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 8 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 85 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 135 | A |  | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | 97.2 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 540 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 160 | W |  | 1 |
| Derating factor |  |  |  | 1.28 | W/℃ |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 920 | mJ | Tj=25℃, VDD=40V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 0.78 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 85 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=85V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 2.9 | 3.5 | mΩ | VGS=10V, ID=65A | 2 |
| Forward Transconductance | gFS | 60 |  |  | S | VDS=5V,ID=65A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=65A | 2 |
| Diode Forward Current | IS |  |  | 130 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCEP035N85GU`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep035n85gu-etched.step` / `ncep035n85gu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep035n85gu.step` / `ncep035n85gu.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588905194331103232) (6 pp, sha256 `156b2486158862e7`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncep035n85gu-datasheet.pdf)