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NCEP035N85GU
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP035N85GU
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP035N85GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 of S1-S3). |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pin 2 of S1-S3). |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pin 3 of S1-S3). |
| 4 | G | input | Gate terminal; VGS rated ±20 V maximum, threshold 2 V to 4 V at 250 µA. |
| 5 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 6 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 7 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 8 | D | passive | Drain terminal, connected to the exposed drain pad; VDS 85 V maximum, ID 135 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 135 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 97.2 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 540 | A | 1 | |||
| Maximum Power Dissipation | PD | 160 | W | 1 | |||
| Derating factor | 1.28 | W/℃ | 1 | ||||
| Single pulse avalanche energy | EAS | 920 | mJ | Tj=25℃, VDD=40V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.78 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=85V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 2.9 | 3.5 | mΩ | VGS=10V, ID=65A | 2 | |
| Forward Transconductance | gFS | 60 | S | VDS=5V,ID=65A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=65A | 2 | ||
| Diode Forward Current | IS | 130 | A | 2 |
CAD (KiCad official)
- Symbol:
NCEP035N85GU - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep035n85gu-etched.step/ncep035n85gu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep035n85gu.step/ncep035n85gu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
156b2486158862e7, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).