# NCE8205t

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23-6L

NCE8205t from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (bottom-left in top view, at the pin-1 dot); VDS 20V, ID 5A rating per device. |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (bottom middle in top view), tied internally to pin 5; VDS max 20V. |
| 3 | S2 | passive | Source of MOSFET 2 (bottom-right in top view); VDS 20V, ID 5A rating per device. |
| 4 | G2 | input | Gate of MOSFET 2 (top-right in top view); VGS max ±12V, RDS(ON) <32mΩ at VGS=2.5V and <23mΩ at 4.5V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (top middle in top view), tied internally to pin 2; VDS max 20V. |
| 6 | G1 | input | Gate of MOSFET 1 (top-left in top view); VGS max ±12V, RDS(ON) <32mΩ at VGS=2.5V and <23mΩ at 4.5V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 25 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=19.5V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 16.5 | 23 | mΩ | VGS=4.5V, ID=5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 22 | 32 | mΩ | VGS=2.5V, ID=5A | 2 |
| Diode Forward Voltage | VSD |  | 0.8 | 1.2 | V | VGS=0V,IS=5A | 2 |
| Diode Forward Current | IS |  |  | 5 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCE8205t`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `nce8205t-etched.step` / `nce8205t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce8205t.step` / `nce8205t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912763184033792) (7 pp, sha256 `6d63d8d27cfa5be6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce8205t-datasheet.pdf)