component
NCE8205t
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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NCE8205t
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-6L
NCE8205t from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (bottom-left in top view, at the pin-1 dot); VDS 20V, ID 5A rating per device. |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (bottom middle in top view), tied internally to pin 5; VDS max 20V. |
| 3 | S2 | passive | Source of MOSFET 2 (bottom-right in top view); VDS 20V, ID 5A rating per device. |
| 4 | G2 | input | Gate of MOSFET 2 (top-right in top view); VGS max ±12V, RDS(ON) <32mΩ at VGS=2.5V and <23mΩ at 4.5V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2 (top middle in top view), tied internally to pin 2; VDS max 20V. |
| 6 | G1 | input | Gate of MOSFET 1 (top-left in top view); VGS max ±12V, RDS(ON) <32mΩ at VGS=2.5V and <23mΩ at 4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 5 | A | 1 | |||
| Drain Current-Pulsed | IDM | 25 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=19.5V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 16.5 | 23 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 22 | 32 | mΩ | VGS=2.5V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=5A | 2 | |
| Diode Forward Current | IS | 5 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE8205t - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
nce8205t-etched.step/nce8205t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce8205t.step/nce8205t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
6d63d8d27cfa5be6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).