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NCE60P50K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE60P50K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE60P50K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20V maximum and a threshold of -2.0 to -3.5V at ID=-250μA.
2 D passive Drain, shown on the package drawing as the center stub and the mounting tab; the drain-source voltage is rated -60V and continuous drain current -50A.
3 S passive Source; the body diode runs from source to drain, with a continuous forward current of -50A and a forward voltage of -1.2V at -20A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -2 -2.6 -3.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 23 28 mΩ VGS=-10V, ID=-20A 2
Forward Transconductance gFS 25 S VDS=-10V,ID=-20A 2
Input Capacitance Clss 6460 PF 2
Output Capacitance Coss 719 PF 2
Reverse Transfer Capacitance Crss 535 PF VDS=-25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 15 nS 2
Turn-on Rise Time tr 17 nS 2
Turn-Off Delay Time td(off) 40 nS 2
Turn-Off Fall Time tf 45 nS VDD=-30V, RL=1.5Ω，VGS=-10V,RG=3Ω 2
Total Gate Charge Qg 75 nC 2
Gate-Source Charge Qgs 16 nC 2
Gate-Drain Charge Qgd 19 nC VDS=-30,ID=-20A, VGS=-10V 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-20A 2
Diode Forward Current IS -50 A 2
Reverse Recovery Time trr 50 nS 2
Reverse Recovery Charge Qrr 59 nC TJ = 25°C, IF =-20A di/dt = -100A/μs(Note3) 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -50 A TC=25℃ 1
Drain Current-Continuous(TC=100℃) ID (100℃) -35 A TC=100℃ 1
Pulsed Drain Current IDM -150 A 1
Maximum Power Dissipation PD 95 W 1
Derating factor 0.76 W/℃ 1
Single pulse avalanche energy EAS 722 mJ Note 5: Tj=25℃,VDD=-30V,VG=-10V,L=1mH,Rg=25Ω,IAS=38A 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.31 ℃/W Note 2 (surface mounted on FR4 board, t ≤ 10 sec) 2

CAD (KiCad official)

  • Symbol: NCE60P50K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce60p50k-etched.step / nce60p50k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce60p50k.step / nce60p50k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 324f57238d3c1446, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF