component
NCE60P50K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce60p50k: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+405−1
README.md+37@@ -21,6 +21,43 @@ NCE60P50K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin desc | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V ID=-250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-60V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -2 | -2.6 | -3.5 | V | VDS=VGS,ID=-250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 23 | 28 | mΩ | VGS=-10V, ID=-20A | 2 |+| Forward Transconductance | gFS | | 25 | | S | VDS=-10V,ID=-20A | 2 |+| Input Capacitance | Clss | | 6460 | | PF | | 2 |+| Output Capacitance | Coss | | 719 | | PF | | 2 |+| Reverse Transfer Capacitance | Crss | | 535 | | PF | VDS=-25V,VGS=0V, F=1.0MHz | 2 |+| Turn-on Delay Time | td(on) | | 15 | | nS | | 2 |+| Turn-on Rise Time | tr | | 17 | | nS | | 2 |+| Turn-Off Delay Time | td(off) | | 40 | | nS | | 2 |+| Turn-Off Fall Time | tf | | 45 | | nS | VDD=-30V, RL=1.5Ω，VGS=-10V,RG=3Ω | 2 |+| Total Gate Charge | Qg | | 75 | | nC | | 2 |+| Gate-Source Charge | Qgs | | 16 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 19 | | nC | VDS=-30,ID=-20A, VGS=-10V | 2 |+| Diode Forward Voltage | VSD | | -1.2 | | V | VGS=0V,IS=-20A | 2 |+| Diode Forward Current | IS | | | -50 | A | | 2 |+| Reverse Recovery Time | trr | | 50 | | nS | | 2 |+| Reverse Recovery Charge | Qrr | | 59 | | nC | TJ = 25°C, IF =-20A di/dt = -100A/μs(Note3) | 2 |+| Drain-Source Voltage | VDS | | | -60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | -50 | A | TC=25℃ | 1 |+| Drain Current-Continuous(TC=100℃) | ID (100℃) | | | -35 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM | | | -150 | A | | 1 |+| Maximum Power Dissipation | PD | | | 95 | W | | 1 |+| Derating factor | | | 0.76 | | W/℃ | | 1 |+| Single pulse avalanche energy | EAS | | | 722 | mJ | Note 5: Tj=25℃,VDD=-30V,VG=-10V,L=1mH,Rg=25Ω,IAS=38A | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | 1.31 | | ℃/W | Note 2 (surface mounted on FR4 board, t ≤ 10 sec) | 2 |+ ## CAD (KiCad official) - Symbol: `NCE60P50K`
page.json+368−1@@ -148,6 +148,373 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "324f57238d3c1446",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-60V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2,+ "typ": -2.6,+ "max": -3.5,+ "conditions": "VDS=VGS,ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 23,+ "max": 28,+ "conditions": "VGS=-10V, ID=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 25,+ "max": null,+ "conditions": "VDS=-10V,ID=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Clss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 6460,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 719,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 535,+ "max": null,+ "conditions": "VDS=-25V,VGS=0V, F=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 45,+ "max": null,+ "conditions": "VDD=-30V, RL=1.5Ω，VGS=-10V,RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 75,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "VDS=-30,ID=-20A, VGS=-10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -1.2,+ "max": null,+ "conditions": "VGS=0V,IS=-20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 59,+ "max": null,+ "conditions": "TJ = 25°C, IF =-20A di/dt = -100A/μs(Note3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous(TC=100℃)",+ "symbol": "ID (100℃)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -35,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 95,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derating factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/℃",+ "min": null,+ "typ": 0.76,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 722,+ "conditions": "Note 5: Tj=25℃,VDD=-30V,VG=-10V,L=1mH,Rg=25Ω,IAS=38A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 1.31,+ "max": null,+ "conditions": "Note 2 (surface mounted on FR4 board, t ≤ 10 sec)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +556,4 @@ "visibility": { "public": true }-}+}