# NCE60P09S

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE60P09S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (2, 3). |
| 2 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 3). |
| 3 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 2). |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20V maximum, threshold VGS(th) -1.8V to -3.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; VDS rated -60V, ID -9A continuous. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; VDS rated -60V, ID -9A continuous. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; VDS rated -60V, ID -9A continuous. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; VDS rated -60V, ID -9A continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | -9 | A |  | 1 |
| Drain Current-Continuous | ID (100℃) |  |  | -6.4 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 36 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 3 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 156 | mJ | Note 5: Tj=25℃, VDD=-30V, VG=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 41.7 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=-60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.8 | -2.6 | -3.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 32 | 38 | mΩ | VGS=-10V, ID=-9A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=-9A | 2 |
| Diode Forward Current | IS |  |  | -9 | A |  | 2 |
| Reverse Recovery Time | trr |  |  | 40 | nS |  | 2 |
| Reverse Recovery Charge | Qrr |  |  | 70 | nC | TJ = 25°C, IF = -9A, di/dt = 100A/μs (Note3) | 2 |

## CAD (KiCad official)

- Symbol: `NCE60P09S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce60p09s-etched.step` / `nce60p09s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce60p09s.step` / `nce60p09s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911608601329664) (7 pp, sha256 `925f7154dd05ade7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce60p09s-datasheet.pdf)