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NCE60P09S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE60P09S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE60P09S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (2, 3). |
| 2 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 3). |
| 3 | S | passive | Source of the P-channel MOSFET, internally tied to the other source pins (1, 2). |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20V maximum, threshold VGS(th) -1.8V to -3.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; VDS rated -60V, ID -9A continuous. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; VDS rated -60V, ID -9A continuous. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; VDS rated -60V, ID -9A continuous. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; VDS rated -60V, ID -9A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -9 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | -6.4 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | 1 | |||
| Maximum Power Dissipation | PD | 3 | W | 1 | |||
| Single pulse avalanche energy | EAS | 156 | mJ | Note 5: Tj=25℃, VDD=-30V, VG=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 41.7 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.8 | -2.6 | -3.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 32 | 38 | mΩ | VGS=-10V, ID=-9A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=-9A | 2 | ||
| Diode Forward Current | IS | -9 | A | 2 | |||
| Reverse Recovery Time | trr | 40 | nS | 2 | |||
| Reverse Recovery Charge | Qrr | 70 | nC | TJ = 25°C, IF = -9A, di/dt = 100A/μs (Note3) | 2 |
CAD (KiCad official)
- Symbol:
NCE60P09S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce60p09s-etched.step/nce60p09s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce60p09s.step/nce60p09s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
925f7154dd05ade7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).