# NCE6003XY

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23-3L

NCE6003XY from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±20V, with VGS(th) of 0.9V min to 2.0V max at ID=250μA. |
| 2 | S | passive | Source terminal; continuous drain current is 3A and the body diode forward current IS is 3A max. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated 60V, with continuous ID of 3A and pulsed IDM of 10A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 3 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 1) | 1 |
| Maximum Power Dissipation | PD |  |  | 1.7 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V ID=250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.3 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 68 | 90 | mΩ | VGS=10V, ID=3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 80 | 110 | mΩ | VGS=4.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=3A | 2 |
| Diode Forward Current | IS |  |  | 3 | A |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 73.5 |  | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |

## CAD (KiCad official)

- Symbol: `NCE6003XY`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `nce6003xy-etched.step` / `nce6003xy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce6003xy.step` / `nce6003xy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590236034174132224) (7 pp, sha256 `64b27acfbd203414`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce6003xy-datasheet.pdf)