component
NCE6003XY
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| nce6003xy-etched.glb | 23d ago |
| nce6003xy-etched.step | 23d ago |
| nce6003xy-hero.glb | 23d ago |
| nce6003xy-hero.overlay.json | 23d ago |
| nce6003xy.glb | 23d ago |
| nce6003xy.kicad_mod | 23d ago |
| nce6003xy.kicad_sym | 23d ago |
| nce6003xy.lbr | 23d ago |
| nce6003xy.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
NCE6003XY
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L
NCE6003XY from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±20V, with VGS(th) of 0.9V min to 2.0V max at ID=250μA. |
| 2 | S | passive | Source terminal; continuous drain current is 3A and the body diode forward current IS is 3A max. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated 60V, with continuous ID of 3A and pulsed IDM of 10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed | IDM | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.3 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 68 | 90 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 80 | 110 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=3A | 2 | ||
| Diode Forward Current | IS | 3 | A | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 73.5 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
NCE6003XY - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
nce6003xy-etched.step/nce6003xy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce6003xy.step/nce6003xy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
64b27acfbd203414, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).