# NCE4963

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE4963 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel); VDS rated -20V. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±12V, usable with gate drive as low as 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel); VDS rated -20V. |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±12V, usable with gate drive as low as 2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous drain current -7A, pulsed -40A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; continuous drain current -7A, pulsed -40A. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous drain current -7A, pulsed -40A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; continuous drain current -7A, pulsed -40A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | -7 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | -40 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 1) | 1 |
| Maximum Power Dissipation | PD |  |  | 3 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 42 | ℃/W | Note 2: Surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.6 | -0.8 | -1.4 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 21 | 27 | mΩ | VGS=-4.5V, ID=-6.5A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 29 | 39 | mΩ | VGS=-2.5V, ID=-5A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-7A | 2 |

## CAD (KiCad official)

- Symbol: `NCE4963`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce4963-etched.step` / `nce4963-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce4963.step` / `nce4963.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884820276989952) (7 pp, sha256 `7ccf64df3f2d4ccb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce4963-datasheet.pdf)