component
NCE4963
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| nce4963-etched.glb | 23d ago |
| nce4963-etched.step | 23d ago |
| nce4963-hero.glb | 23d ago |
| nce4963-hero.overlay.json | 23d ago |
| nce4963.glb | 23d ago |
| nce4963.kicad_mod | 23d ago |
| nce4963.kicad_sym | 23d ago |
| nce4963.lbr | 23d ago |
| nce4963.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
NCE4963
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE4963 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel); VDS rated -20V. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±12V, usable with gate drive as low as 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel); VDS rated -20V. |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±12V, usable with gate drive as low as 2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous drain current -7A, pulsed -40A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; continuous drain current -7A, pulsed -40A. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous drain current -7A, pulsed -40A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; continuous drain current -7A, pulsed -40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | -7 | A | 1 | |||
| Drain Current-Pulsed | IDM | -40 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 42 | ℃/W | Note 2: Surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.6 | -0.8 | -1.4 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 21 | 27 | mΩ | VGS=-4.5V, ID=-6.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 29 | 39 | mΩ | VGS=-2.5V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-7A | 2 |
CAD (KiCad official)
- Symbol:
NCE4963 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce4963-etched.step/nce4963-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce4963.step/nce4963.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
7ccf64df3f2d4ccb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).