# NCE4606

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE4606 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (VDS 30V, ID 6.5A at TA=25℃). |
| 2 | G2 | input | Gate of the N-channel MOSFET, rated ±20V VGS maximum with threshold 1 to 3V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (VDS -30V, ID -7A at TA=25℃). |
| 4 | G1 | input | Gate of the P-channel MOSFET, rated ±20V VGS maximum with threshold -1.5 to -2.5V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET, shorted externally with pin 6 (VDS -30V, pulsed ID -30A). |
| 6 | D1 | passive | Drain of the P-channel MOSFET, shorted externally with pin 5 (VDS -30V, pulsed ID -30A). |
| 7 | D2 | passive | Drain of the N-channel MOSFET, shorted externally with pin 8 (VDS 30V, pulsed ID 30A). |
| 8 | D2 | passive | Drain of the N-channel MOSFET, shorted externally with pin 7 (VDS 30V, pulsed ID 30A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS |  |  | 30 | V | N-Channel, absolute maximum rating | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -30 |  |  | V | P-Channel, absolute maximum rating | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V | N-Channel, absolute maximum rating | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V | P-Channel, absolute maximum rating | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 6.5 | A | TA=25℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -7 |  |  | A | TA=25℃ | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 5.4 | A | TA=70℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -5.8 |  |  | A | TA=70℃ | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 30 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -30 |  |  | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation (N-Channel) | PD |  |  | 2 | W | TA=25℃ | 1 |
| Maximum Power Dissipation (P-Channel) | PD |  |  | 2 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range (N-Channel) | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction and Storage Temperature Range (P-Channel) | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA |  | 62.5 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA |  | 62.5 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | 33 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) |  | 20 | 30 | mΩ | VGS=10V, ID=6A | 2 |
| Forward Transconductance (N-Channel) | gFS | 15 |  |  | S | VDS=5V,ID=6A | 2 |
| Diode Forward Voltage (N-Channel) | VSD |  | 0.8 | 1.2 | V | VGS=0V,IS=6A | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | -33 |  | V | VGS=0V ID=-250μA | 3 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS |  |  | -1 | μA | VDS=-30V,VGS=0V | 3 |
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | -1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) |  | 28 | 33 | mΩ | VGS=-10V, ID=-6.5A | 3 |
| Forward Transconductance (P-Channel) | gFS | 10 |  |  | S | VDS=-5V,ID=-6.5A | 3 |
| Diode Forward Voltage (P-Channel) | VSD |  |  | -1.2 | V | VGS=0V,IS=-6.5A | 3 |

## CAD (KiCad official)

- Symbol: `NCE4606`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce4606-etched.step` / `nce4606-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce4606.step` / `nce4606.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879825004478464) (10 pp, sha256 `6c3770b57657b24f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce4606-datasheet.pdf)