component
NCE4606
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce4606: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+405−1
README.md+37@@ -26,6 +26,43 @@ NCE4606 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-Channel) | VDS | | | 30 | V | N-Channel, absolute maximum rating | 1 |+| Drain-Source Voltage (P-Channel) | VDS | -30 | | | V | P-Channel, absolute maximum rating | 1 |+| Gate-Source Voltage (N-Channel) | VGS | -20 | | 20 | V | N-Channel, absolute maximum rating | 1 |+| Gate-Source Voltage (P-Channel) | VGS | -20 | | 20 | V | P-Channel, absolute maximum rating | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 6.5 | A | TA=25℃ | 1 |+| Continuous Drain Current (P-Channel) | ID | -7 | | | A | TA=25℃ | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 5.4 | A | TA=70℃ | 1 |+| Continuous Drain Current (P-Channel) | ID | -5.8 | | | A | TA=70℃ | 1 |+| Pulsed Drain Current (N-Channel) | IDM | | | 30 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Pulsed Drain Current (P-Channel) | IDM | -30 | | | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation (N-Channel) | PD | | | 2 | W | TA=25℃ | 1 |+| Maximum Power Dissipation (P-Channel) | PD | | | 2 | W | TA=25℃ | 1 |+| Operating Junction and Storage Temperature Range (N-Channel) | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Operating Junction and Storage Temperature Range (P-Channel) | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA | | 62.5 | | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA | | 62.5 | | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | 33 | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |+| Gate-Body Leakage Current (N-Channel) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | | 20 | 30 | mΩ | VGS=10V, ID=6A | 2 |+| Forward Transconductance (N-Channel) | gFS | 15 | | | S | VDS=5V,ID=6A | 2 |+| Diode Forward Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | VGS=0V,IS=6A | 2 |+| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | -33 | | V | VGS=0V ID=-250μA | 3 |+| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 3 |+| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 3 |+| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | -1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 3 |+| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | | 28 | 33 | mΩ | VGS=-10V, ID=-6.5A | 3 |+| Forward Transconductance (P-Channel) | gFS | 10 | | | S | VDS=-5V,ID=-6.5A | 3 |+| Diode Forward Voltage (P-Channel) | VSD | | | -1.2 | V | VGS=0V,IS=-6.5A | 3 |+ ## CAD (KiCad official) - Symbol: `NCE4606`
page.json+368−1@@ -178,6 +178,373 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6c3770b57657b24f",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "N-Channel, absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "P-Channel, absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "N-Channel, absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "P-Channel, absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -7,+ "typ": null,+ "max": null,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "TA=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.8,+ "typ": null,+ "max": null,+ "conditions": "TA=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range (N-Channel)",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range (P-Channel)",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (N-Channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 62.5,+ "max": null,+ "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (P-Channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 62.5,+ "max": null,+ "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-Channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": 33,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (N-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 3,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 20,+ "max": 30,+ "conditions": "VGS=10V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (N-Channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 15,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "VGS=0V,IS=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-Channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": -33,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V,VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (P-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.5,+ "typ": -1.9,+ "max": -2.5,+ "conditions": "VDS=VGS,ID=-250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 28,+ "max": 33,+ "conditions": "VGS=-10V, ID=-6.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (P-Channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VDS=-5V,ID=-6.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (P-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V,IS=-6.5A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +586,4 @@ "visibility": { "public": true }-}+}